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VSMY3850 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

Overview: www.DataSheet.co.kr VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter.

General Description

VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission • IR touch panels • 3D TV • Light curtain PRODUCT SUMMARY COMPONENT VSMY3850 Ie (mW/sr) 17 ϕ (deg) ± 60 λP (nm) 850 tr (ns) 10 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY3850-GS08 VSMY3850-GS18 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83399 Rev.

1.0, 22-Dec-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junctio

Key Features

  • Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 60° Suitable for high pulse current operation Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS Directive 2002/95/EC and in.

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