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VSMY7852X01 Datasheet High Power Infrared Emitting Diode

Manufacturer: Vishay

Overview: www.DataSheet.co.kr VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter.

General Description

VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package.

A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA.

AAPPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Driver assistance systems • Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7852X01 Ie (mW/sr) 42  (deg) ± 60 p (nm) 850 tr (ns) 15 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY7852X01-GS08 Note • MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little Star ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/pin Document Number: 81146 Rev.

Key Features

  • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:.
  • p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP.

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