BA1282
BA1282 is Silicon Planar Diodes manufactured by Vishay.
Features
Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983
96 12315
D Low differential forward resistance D Low diode capacitance D High reverse impedance
Applications
Band switching in VHF- tuners
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150
- 55...+150 Unit V m A °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy- glass hard tissue, Fig. 1 35mm copper clad, 0.9 mm2 copper area per electrode Symbol Rth JA Value 500 Unit K/W
Document Number 85525 Rev. 2, 01-Apr-99
.vishay.de
- Fax Back +1-408-970-5600 1 (4)
BA1282.BA1283
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100m A VR=20V f=100MHz, VR=1V f=100MHz, VR=3V f=100MHz, VR=3V f=200MHz, IF=3m A f=200MHz, IF=3m A f=200MHz, IF=10m A f=200MHz, IF=10m A Type Symbol VF IR CD CD CD rf rf rf rf Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V n A p F p F p F
Differential forward resistance
BA1282 BA1283 BA1282 BA1283 BA1282 BA1283
Characteristics (Tj = 25_C unless otherwise specified) rf
- Differential Forward Resistance (W ) 100 CD
- Diode Capacitance ( p F ) f = 200 MHz Tj = 25°C 10 3.0 2.5 2.0 1.5 BA1282 1.0 BA1283 0.5 0 0.1
94 9076 f = 100 MHz Tj = 25°C
BA 1283 1
BA1282 0.1 1 10 100
94 9077
- Forward Current ( m A )
- Reverse Voltage ( V )
Figure 1. Differential Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
.vishay.de
- Fax Back +1-408-970-5600 2 (4)
Document Number 85525 Rev. 2, 01-Apr-99
BA1282.BA1283
Vishay Telefunken
0.71 1.3...
