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Vishay Intertechnology Electronic Components Datasheet

BAQ333 Datasheet

Small Signal Switching Diode

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www.vishay.com
BAQ333, BAQ334, BAQ335
Vishay Semiconductors
Small Signal Switching Diodes, Low Leakage Current
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes / options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon planar diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
• Very low reverse current
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAQ333
BAQ334
BAQ335
VRRM = 40 V
VRRM = 70 V
VRRM = 140 V
ORDERING CODE
BAQ333-TR3 or BAQ333-TR
BAQ334-TR3 or BAQ334-TR
BAQ335-TR3 or BAQ335-TR
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
BAQ333
VRRM
Repetitive peak reverse voltage
BAQ334
VRRM
BAQ335
BAQ333
VRRM
VR
Reverse voltage
BAQ334
VR
Peak forward surge current
tp = 1 μs
BAQ335
VR
IFSM
Forward continuous current
IF
VALUE
40
70
140
30
60
125
2
200
UNIT
V
V
V
V
V
V
A
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, fig. 4
35 μm copper clad, 0.9 mm2
copper area per electrode
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
VALUE
500
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 2.2, 11-Jul-17
1
Document Number: 85538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

BAQ333 Datasheet

Small Signal Switching Diode

No Preview Available !

www.vishay.com
BAQ333, BAQ334, BAQ335
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
IF = 100 mA
VF
E 300 lx, rated VR
IR
E 300 lx, rated VR, Tj = 125 °C
IR
E 300 lx, VR = 15 V
BAQ333
IR
E 300 lx, VR = 30 V
BAQ334
IR
E 300 lx, VR = 60 V
BAQ335
IR
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
BAQ333
V(BR)
40
BAQ334
V(BR)
70
BAQ335
V(BR)
140
VR = 0 V, f = 1 MHz
CD
TYP.
1
0.5
0.5
0.5
MAX.
1
3
0.5
1
1
1
3
UNIT
V
nA
μA
nA
nA
nA
V
V
V
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
VR = VRRM
1000
0.71
1.3
1.27
0.152
Scattering Limit
100
0.355
10
1
0
40
80 120 160 200
94 9079
Tj - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
1000
Tj = 25 °C
100
10
Scattering Limit
95 10329
2.5
24
Fig. 3 - Board for RthJA Definition (in mm)
1
0.1
0
94 9078
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 2.2, 11-Jul-17
2
Document Number: 85538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number BAQ333
Description Small Signal Switching Diode
Maker Vishay Telefunken
Total Page 3 Pages
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