S350P phototransistor equivalent, silicon npn phototransistor.
D D D D D
High radiant sensitivity Miniature T
–¾ flat plastic package with IR filter Very wide angle of half sensitivity ϕ = ± 40° Suitable for near infra.
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Emitter Volt.
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