S822TRW
S822TRW is Silicon NPN Planar RF Transistor manufactured by Vishay.
Features
D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain
94 9279
13 579
13 653
13 566
S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
S822TW Marking: W22 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 654
13 566
S822TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85050 Rev. 3, 20-Jan-99
.vishay.de
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S822T/S822TW/S822TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150
- 65 to +150 Unit V V V m A m W °C °C
Tamb ≤ 125 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 m A, IB = 0 IC = 5 m A, IB = 0.5 m A VCE = 3 V, IC = 1 m A Symbol Min Typ Max Unit ICES 100 m A ICBO 100 n A IEBO 1 m A V(BR)CEO 6 V VCEsat 0.1 0.4 V h FE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Test Conditions VCE = 3 V, IC = 1 m A, f = 500 MHz VCE = 2 V, IC = 1.5 m A, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 m A ZS = ZSopt, f...
