S886T/S886TR
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 6 V, VG2S = VDS = 0
–VG1S = 6 V, VG2S = VDS = 0
±VG2S = 6 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
VDS = 12 V, VG1S = 0, VG2S = 6 V
VDS = 12 V, VG1S = nc, VG2S = 6 V
Gate 2 - source
cut-off voltage
VDS = 12 V, VG1S = nc, ID = 200 mA
Symbol Min Typ Max Unit
±V(BR)G1SS 8
12 V
±V(BR)G2SS 8
12 V
+IG1SS
–IG1SS
±IG2SS
60 mA
120 mA
20 nA
IDSS
IDSP
50 500 mA
8 12 16 mA
VG2S(OFF)
1.0
V
Electrical AC Characteristics
VDS = 12 V, VG2S = 6 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 12 V, VG2S = 1 to 6 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Symbol Min Typ Max Unit
y21s 25 30 35 mS
Cissg1
2.3 2.7 pF
Crss 20 fF
Coss
0.9 pF
Gps 27 dB
Gps 17.5 22
DGps 45
dB
dB
F 1 dB
F 1.3 dB
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S
Using open collector switching
< 0.7 V is
transistor
feasible.
(inside of
PLL),
insert
10
kW
collector
resistor.
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2 (8)
Document Number 85057
Rev. 3, 20-Jan-99
