S949T/S949TR/S949TRW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
12
30
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
–VG1S = 5 V, VG2S = VDS = 0
±VG2S = 5 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
VDS = 9 V, VG1S = 0, VG2S = 4 V
VDS = 9 V, VG1S = nc, VG2S = 4 V
mVDS = 9 V, VG1S = nc, ID = 100 A
Symbol Min Typ Max Unit
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
+IG1SS
–IG1SS
±IG2SS
IDSS
IDSP
50
8
10 V
50 mA
100 mA
20 nA
500 mA
12 16 mA
VG2S(OFF)
1.0
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S < 0.7 V is feasible.
WUsing open collector switching transistor (inside of PLL), insert 10 k collector resistor.
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2 (9)
Document Number 85061
Rev. 3, 20-Jan-99
