Description
The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
Features
- Approvals:
D Creepage current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness through insulation ≥ 0.75 mm D Internal creepage distance > 4 mm General features:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 11992
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222.
- Double Protection
D CSA (C.
- UL) 1577 recognized,
file num.
TCED2100 Datasheet
