900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WAYON

WMK16N65C2 Datasheet Preview

WMK16N65C2 Datasheet

Super Junction Power MOSFET

No Preview Available !

WML16N65C2, WMK16N65C2, WMM16N65C2
WMN16N65C2, WMP16N65C2, WMO16N65C2
650V 0.27Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOSTM C2 is
suitable for applications which require superior
power density and outstanding efficiency.
Features
VDS =700V @ Tj,max
Typ. RDS(on) =0.27
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
G DS
TO-220F
D
GDS
TO-262
G DS
TO-220
D
S
G
TO-263
G DS
TO-251
S
G
TO-252
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
- Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMK/WMM/WMO/WMP/WMN
650
13
7.8
26
±30
145
0.21
2
86
0.69
-55 to +150
13
26
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMK/WMM/WMO/WMP/WMN
1.45
62
Doc.W0865005
WML
31
0.25
WML
4
80
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Unit
°C/W
°C/W
1 / 10




WAYON

WMK16N65C2 Datasheet Preview

WMK16N65C2 Datasheet

Super Junction Power MOSFET

No Preview Available !

WMx16N65C2
Electrical Characteristics Tc = 25°C, unless otherwise noted 
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
IDSS VDS=650 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
Gate leakage current, forward
IGSSF
VGS=30 V, VDS=0 V
Gate leakage current, reverse
IGSSR
VGS=-30 V, VDS=0 V
Drain-source on-state resistance
Dynamic characteristics
RDS(on)
VGS=10 V, ID=5.5 A
Tj = 25°C
Input capacitance
Output capacitance
Ciss VDS= 25 V, VGS= 0 V,
Coss f = 1 MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
td(on)
tr
VDD = 300V, ID = 5.5A
RG = 25, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs VDD=480 V, ID=5.5A,
Qgd VGS=0 to 10 V
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD VGS=0 V, IF=5.5A
trr VR=50 V, IF=5.5A,
Qrr dIF/dt=100 A/μs
Peak reverse recovery current
Irrm
Notes:
1. Limited by Tj max. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. IAS = 2 A, VDD = 50V, RG = 25, starting Tj = 25°C.
Min. Typ. Max. Unit
650 -
-
2.5 3.3 4.5
- -1
- 10 -
- - 100
- - -100
-
- 0.27 0.32
V
V
μA
nA
nA
- 992 -
- 595 -
pF
- 1.4 -
- 28 -
- 17 - ns
- 78 -
- 20
-
- 4.9 -
- 7.8 -
- 19.9 -
- 5.4 -
nC
V
- - 1.2 V
- 264 -
ns
- 2.07 -
μC
- 16 - A
Rev.2.0, 2017
www.way-on.com
2 / 10


Part Number WMK16N65C2
Description Super Junction Power MOSFET
Maker WAYON
Total Page 10 Pages
PDF Download

WMK16N65C2 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 WMK16N65C2 Super Junction Power MOSFET
WAYON





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy