WML09N60VD Datasheet | WAYON

Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features - VDS =650V @ Tj,max - IDM =10.5A - Typ. RDS(on) =1.0Ω - 100% UIS tested - Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server GD S TO-220F TO-263 GD S TO-220 GD S TO-262 DS G TO-251 TO-252 G DS S GD TO-251S3 TO-251S2 Ro HS pliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power...