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WML09N65VD Datasheet Preview

WML09N65VD Datasheet

Super Junction Power MOSFET

No Preview Available !

WMK09N65VD, WML09N65VD, WMH09N65VD, WMM09N65VD
WMN09N65VD, WMO09N65VD, WMP09N65VD, WMG09N65VD
650V 1.0Super Junction Power MOSFET
Description
WMOSTM VD is Wayon’s new high voltage power
MOSFET family that is utilizing advanced
technology for extremely low on-resistance and low
gate charge performance. WMOSTM VD is suitable
for applications which require superior power
density and outstanding efficiency.
Features
VDS =700V @ Tj,max
IDM =10.5A
Typ. RDS(on) =1.0
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
GD S
TO-220F
S
G
TO-263
G
GD S
TO-220
GD S
TO-262
D
DS
G
TO-251
S
G
TO-252
G DS
S
GD
TO-251S3 TO-251S2
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
Operating and storage temperature range
Continuous diode forward current1)
Diode pulse current2)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMH_M_O_P_G_N_K
650
6.5
3
10.5
±30
15
0.1
0.7
42
-55 to +150
6.5
10.5
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMH_M_O_P_G_N_K
3
62
Doc.W0865009
WML
23
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
A
A
WML
5.4
80
Unit
°C/W
°C/W
1 / 11




WAYON

WML09N65VD Datasheet Preview

WML09N65VD Datasheet

Super Junction Power MOSFET

No Preview Available !

WMx09N65VD
Electrical Characteristics Tc = 25°C, unless otherwise noted 
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
IDSS VDS=650 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
Gate leakage current, forward
IGSSF
VGS=30 V, VDS=0 V
Gate leakage current, reverse
IGSSR
VGS=-30 V, VDS=0 V
Drain-source on-state resistance
Dynamic characteristics
RDS(on)
VGS=10 V, ID=1A
Tj = 25°C
Input capacitance
Output capacitance
Ciss VDS= 25 V, VGS= 0 V,
Coss f = 1 MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
td(on)
tr
VDD = 300V, ID = 2A
RG = 25, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs VDD=480 V, ID=2A,
Qgd VGS=0 to 10 V
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD VGS=0 V, IF=2A
trr VR=50 V, IF=2A,
Qrr dIF/dt=100 A/μs
Peak reverse recovery current
Irrm
Notes:
1. Limited by Tj max. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. IAS = 0.7A, VDD = 50V, RG = 25, starting Tj = 25°C
Min. Typ. Max. Unit
650 -
-V
2.5 3.3 4.5
V
μA
- -1
- 10 -
- - 100 nA
-
-
-100
nA
-
-
1.0 1.13
- 299 -
- 265 -
pF
-3-
-5-
- 16 - ns
- 24 -
- 12
-
- 1.6 -
- 1.7 - nC
- 5.8 -
-5-V
- - 1.2 V
- 163 -
ns
- 0.84 -
μC
- 10.3 -
A
Rev.2.0, 2017
www.way-on.com
2 / 11


Part Number WML09N65VD
Description Super Junction Power MOSFET
Maker WAYON
Total Page 11 Pages
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