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WMN09N60VD - Super Junction Power MOSFET

General Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • VDS =650V @ Tj,max.
  • IDM =10.5A.
  • Typ. RDS(on) =1.0Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

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Datasheet Details

Part number WMN09N60VD
Manufacturer WAYON
File Size 579.00 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMN09N60VD Datasheet

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Full PDF Text Transcription for WMN09N60VD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WMN09N60VD. For precise diagrams, tables, and layout, please refer to the original PDF.

WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new h...

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.0Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =10.5A  Typ. RDS(on) =1.