WMN09N60VD
Description
WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.
Features
- VDS =650V @ Tj,max
- IDM =10.5A
- Typ. RDS(on) =1.0Ω
- 100% UIS tested
- Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
GD S
TO-220F
TO-263
GD S
TO-220
GD S
TO-262
DS G
TO-251
TO-252
G DS
S GD
TO-251S3 TO-251S2
Ro HS pliant
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current1)
Pulsed drain current2)
( TC = 25°C ) ( TC = 100°C )
Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2)
Power...
