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WMN26N65C2 Datasheet Preview

WMN26N65C2 Datasheet

Super Junction Power MOSFET

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WML26N65C2, WMK26N65C2
WMN26N65C2, WMM26N65C2, WMJ26N65C2
650V 0.16Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOSTM C2 is
suitable for applications which require superior
power density and outstanding efficiency.
Features
VDS =700V @ Tj,max
Typ. RDS(on) =0.16
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
GDS
TO-220F
D
GDS
TO-262
G DS
TO-220
S
G
TO-263
G DS
TO-247
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
- Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMK/WMM/WMN/WMJ
650
20
12
50
±30
418
0.63
3.4
147
1.18
-55 to +150
20
50
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMK/WMM/WMN/WMJ
0.85
62
Doc.W0865012
WML
34
0.27
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
WML
3.7
80
Unit
°C/W
°C/W
1 / 10




WAYON

WMN26N65C2 Datasheet Preview

WMN26N65C2 Datasheet

Super Junction Power MOSFET

No Preview Available !

WMx26N65C2
Electrical Characteristics Tc = 25°C, unless otherwise noted 
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
IDSS VDS=650 V, VGS=0V,
Tj = 25°C
Tj = 125°C
Gate leakage current, forward
IGSSF
VGS=30V, VDS=0V
Gate leakage current, reverse
IGSSR
VGS=-30V, VDS=0V
Drain-source on-state resistance
Dynamic characteristics
RDS(on)
VGS=10 V, ID=8A
Tj = 25°C
Input capacitance
Output capacitance
Ciss VDS= 25V, VGS= 0V,
Coss f = 1 MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
td(on)
tr
VDD = 300V, ID = 10A
RG = 25, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs VDD=480V, ID=10A,
Qgd VGS=0 to 10V
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD VGS=0 V, IF=8A
trr VR=50V, IF=10A,
Qrr dIF/dt=100A/μs
Peak reverse recovery current
Irrm
Notes:
1. Limited by Tj max. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. IAS = 3.4 A, VDD = 50V, RG = 25, starting Tj = 25°C.
Min. Typ. Max. Unit
650 -
-
2.5 3.3 4.5
- -1
- 10 -
- - 100
- - -100
-
- 0.16 0.19
V
V
μA
nA
nA
- 1570 -
- 1330 -
- 10 -
- 36 -
- 38 -
- 120 -
- 30
-
pF
ns
- 7.7 -
- 15.7 -
- 34.5 -
- 5.7 -
nC
V
- - 1.2 V
- 262 -
ns
- 3.17 -
μC
- 28 - A
Rev.2.0, 2017
www.way-on.com
2 / 10


Part Number WMN26N65C2
Description Super Junction Power MOSFET
Maker WAYON
Total Page 10 Pages
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