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WMP10N65VD Datasheet Preview

WMP10N65VD Datasheet

Super Junction Power MOSFET

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WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD
WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD
650V 0.8Super Junction Power MOSFET
Description
WMOSTM VD is Wayon’s new high voltage power
MOSFET family that is utilizing advanced
technology for extremely low on-resistance and low
gate charge performance. WMOSTM VD is suitable
for applications which require superior power
density and outstanding efficiency.
Features
VDS =700V @ Tj,max
IDM =12.5A
Typ. RDS(on) =0.8
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
GD S
TO-220F
S
G
TO-263
G
GD S
TO-220
GD S
TO-262
D
DS
G
TO-251
S
G
TO-252
G DS
S
GD
TO-251S3 TO-251S2
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
Operating and storage temperature range
Continuous diode forward current1)
Diode pulse current2)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMH_M_O_P_G_N_K
650
8
4
12.5
±30
26
0.1
0.9
45
-55 to +150
8
12.5
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Symbol
RθJC
RθJA
WMH_M_O_P_G_N_K
2.8
62
Rev.2.0, 2017
Doc.W0865008
WML
26
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
A
A
WML
4.9
80
Unit
°C/W
°C/W
1 / 11




WAYON

WMP10N65VD Datasheet Preview

WMP10N65VD Datasheet

Super Junction Power MOSFET

No Preview Available !

WMx10N65VD
Electrical Characteristics Tc = 25°C, unless otherwise noted 
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
IDSS VDS=650 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
Gate leakage current, forward
IGSSF
VGS=30 V, VDS=0 V
Gate leakage current, reverse
IGSSR
VGS=-30 V, VDS=0 V
Drain-source on-state resistance
Dynamic characteristics
RDS(on)
VGS=10 V, ID=1 A
Tj = 25°C
Input capacitance
Output capacitance
Ciss VDS= 25 V, VGS= 0 V,
Coss f = 1 MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
td(on)
tr
VDD = 300V, ID = 2A
RG = 25, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs VDD=480 V, ID=2A,
Qgd VGS=0 to 10 V
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD VGS=0 V, IF=2.5A
trr VR=50 V, IF=2A,
Qrr dIF/dt=100 A/μs
Peak reverse recovery current
Irrm
Notes:
1. Limited by Tj max. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. IAS = 0.9A, VDD = 50V, RG = 25, starting Tj = 25°C.
Min. Typ. Max. Unit
650 -
-V
2.5 3.3 4.5
V
μA
- -1
- 10 -
- - 100 nA
-
-
-100
nA
-
-
0.8 0.92
- 343 -
- 250 -
pF
- 3.3 -
-8-
- 17 - ns
- 27 -
- 13
-
- 1.8 -
- 2 - nC
- 6.8 -
- 5.4 -
V
- - 1.2 V
- 166 -
ns
- 0.91 -
μC
- 11.4 -
A
Rev.2.0, 2017
www.way-on.com
2 / 11


Part Number WMP10N65VD
Description Super Junction Power MOSFET
Maker WAYON
Total Page 11 Pages
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