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WMS512K8V-xxx Datasheet Preview

WMS512K8V-xxx Datasheet

512Kx8 MONOLITHIC SRAM

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WMS512K8V-XXX
HI-RELIABILITY PRODUCT
512Kx8 MONOLITHIC SRAM PRELIMINARY*
FEATURES
s Access Times 15, 17, 20ns
s Revolutionary, Center Power/Ground Pinout
JEDEC Approved
• 36 lead Ceramic SOJ (Package 100)
• 36 lead Ceramic Flat Pack (Package 226)
s Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)**
• 32 lead Ceramic Flat Pack (Package 220)**
s 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
s Low Power CMOS
s Low Voltage Operation:
• 3.3V ± 10% Power Supply
s Commercial, Industrial and Military Temperature Range
s TTL Compatible Inputs and Outputs
s Fully Static Operation:
• No clock or refresh required.
s Three State Output.
* This data sheet describes a product that is not fully qualified or
characterized and is subject to change without notice.
** Package under developement.
REVOLUTIONARY PINOUT
36 FLAT PACK
36 CSOJ
TOP VIEW
A0
A1
A2
A3
A4
CS
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE
30 I/O7
29 I/O6
28 GND
27 VCC
26 I/O5
25 I/O4
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)**
32 FLAT PACK (FE)**
TOP VIEW
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 A17
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CS
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
32 CLCC
TOP VIEW
4 3 2 1 32 31 30
A7 5
29 WE
A6 6
28 A13
A5 7
27 A8
A4 8
26 A9
A3 9
25 A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CS
I/O0 13
21 I/O7
14 15 16 17 18 19 20
PIN DESCRIPTION
A0-18
I/O0-7
CS
OE
WE
VCC
GND
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
Power Supply
Ground
April 2001 Rev. 6
1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com




WED

WMS512K8V-xxx Datasheet Preview

WMS512K8V-xxx Datasheet

512Kx8 MONOLITHIC SRAM

No Preview Available !

WMS512K8V-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
TA
TSTG
VG
TJ
VCC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max Unit
Supply Voltage
VCC 3.0
3.6 V
Input High Voltage
VIH 2.2 VCC + 0.3 V
Input Low Voltage
VIL -0.3 +0.8 V
Operating Temp. (Ind.)
TA
-40
+85 °C
TRUTH TABLE
CS OE WE
Mode
Data I/O
Power
H
X X Standby
High Z
Standby
L
LH
Read
Data Out
Active
L X L Write
Data In
Active
L
H
H Out Disable
High Z
Active
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Input capacitance
CIN VIN = 0V, f = 1.0MHz
Output capacitance COUT VOUT = 0V, f = 1.0MHz
This parameter is guaranteed by design but not tested.
Max Unit
12 pF
12 pF
DC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Input Leakage Current
ILI VCC = 3.6, VIN = GND to VCC
Output Leakage Current
ILO CS = VIH, OE = VIH, VOUT = GND to VCC
Operating Supply Current
ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 3.6
Standby Current
ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 3.6
Output Low Voltage
VOL IOL = 4.0mA
Output High Voltage
VOH IOH = -4.0mA
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
NOTE: Contact factory for low power option.
Min
2.4
Max
10
10
100
50
0.4
Units
µA
µA
mA
mA
V
V
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2


Part Number WMS512K8V-xxx
Description 512Kx8 MONOLITHIC SRAM
Maker WED
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