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WEITRON

2N3904 Datasheet Preview

2N3904 Datasheet

NPN Transistor

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NPN General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
2N3904
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
Value
40
60
6.0
200
625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCE= 40 Vdc, IB=0)
Collector Cutoff Current (VCB= 60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0Vdc, I C=0)
Symbol Min Max Unit
V(BR)CEO
40
-
Vdc
V(BR)CBO
V(BR)EBO
ICE0
60
6.0
-
-
-
0.1
Vdc
Vdc
uAdc
ICBO
- 0.1 uAdc
IEBO - 0.1 uAdc
WEITRON
http://www.weitron.com.tw




WEITRON

2N3904 Datasheet Preview

2N3904 Datasheet

NPN Transistor

No Preview Available !

2N3904
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min TYP
ON CHARACTERISTICS
DC Current Gain
(IC= 10 mAdc, VCE=1.0 Vdc)
DC Current Gain
(IC= 50 mAdc, VCE= 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= 50 mAdc, IB= 5 mAdc)
Base-Emitter Saturation Voltage
(IC= 50 mAdc, IB= 5 mAdc)
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=100 MHz)
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
100
60
-
-
300
-
-
-
-
-
Max Unit
400 -
--
0.3 Vdc
0.95 Vdc
- MHz
Classification of hFE(1)
Rank
Range
O
100-200
Y
200-300
G
300-400
WEITRON
http://www.weitron.com.tw


Part Number 2N3904
Description NPN Transistor
Maker WEITRON
PDF Download

2N3904 Datasheet PDF






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