IRF640 - N-Channel Enhancement Mode POWER MOSFET

Datasheet Summary

Features

1 GATE.
Super High Dense Cell Design For Low RDS(ON) R DS(ON).

WEITRON

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Datasheet Details

Part number	IRF640
Manufacturer	WEITRON
File Size	817.55 KB
Description	N-Channel Enhancement Mode POWER MOSFET
Datasheet	IRF640 Datasheet
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N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance 2 SOURCE IRF640 DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 2 3 1. GATE 2. DRAIN 3.

Published: Jul 9, 2017 |