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MMBD4448HCDW Datasheet Preview

MMBD4448HCDW Datasheet

Surface Mount Switching Multi-Chip Diode Array

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MMBD4448HCDW pdf
Surface Mount Switching Multi-Chip
Diode Array
P b Lead(Pb)-Free
MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
MULTI-CHIP DIODES
500m AMPERES
100 VOLTS
Features:
* Fast Switching Speed
* Ultra-Small Surface Mount Package
* For General Purpose Switching Applications
* High Conductance Power Dissipation
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
6 54
123
SOT-363
SOT-363 Outline Dimensions
A
6 54
1 23
BC
E
D
H
K
J
L
M
Unit:mm
SOT-363
Dim Min
Max
A 0.10
0.30
B 1.15
1.35
C 2.00
2.20
D 0.65 REF
E 0.30
0.40
H 1.80
2.20
J-
0.10
K 0.80
1.10
L 0.25
0.40
M 0.10
0.25
WEITRON
http://www.weitron.com.tw
1/4
04-Jan-06



WEITRON
WEITRON

MMBD4448HCDW Datasheet Preview

MMBD4448HCDW Datasheet

Surface Mount Switching Multi-Chip Diode Array

No Preview Available !

MMBD4448HCDW pdf
MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Maximum Ratings@ TA= 25°C unless otherwise specified
Characteristic
Symbol
Non-Repetitive Peak Reverse Voltage
VRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
VRRM
VRWM
VR
VR(RMS)
IFM
Average Rectified Output Current (Note 1)
IO
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
@ t = 1.0s
IFSM
Power Dissipation (Note 1)
Thermal Resistant Junction to Ambient Air (Note 1)
PD
RθJA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Value
100
80
57
500
250
4.0
2.0
200
625
+150
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Reverse Breakdown Voltage (Note 2)
IR = 100µA
V(BR)R
Forward Voltage (Note 2)
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VF
Reverse Current (Note 2)
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
IR
Total Capacitance
VR = 6V, f = 1.0MHz
CT
Reverse Recovery Time
VR = 6V, IF= 5mA
Trr
Notes:2. Short duration test pulse used to minimize self-heating effect.
80
0.62
-
-
-
-
-
-
WEITRON
http://www.weitron.com.tw
2/4
Max
-
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
µA
µA
nA
pF
ns
04-Jan-06


Part Number MMBD4448HCDW
Description Surface Mount Switching Multi-Chip Diode Array
Maker WEITRON
Total Page 4 Pages
PDF Download
MMBD4448HCDW pdf
MMBD4448HCDW Datasheet PDF
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