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2SA821S Datasheet

PNP Transistor

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RoHS
2SA821S
2SA821S TRANSISTOR (PNP)
TO-92S
TDFEATURES
.,LPower dissipation
PD: 0.25 W (Tamb=25)
Collector current
OICM: -0.03 A
Collector-base voltage
CV(BR)CBO : -210 V
Operating and storage junction temperature range
ICTJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
NELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
OCollector-base breakdown voltage
RCollector-emitter breakdown voltage
TEmitter-base breakdown voltage
CCollector cut-off current
EEmitter cut-off current
LDC current gain
Collector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Test conditions
Ic= -50µA , IE=0
IC= -0.1 mA , IB=0
IE= -50µA, IC=0
VCB=-150V, IE=0
VEB= -4.5 V , IC=0
VCE=-3 V, IC= -5mA
IC= -2mA, IB= -0.2mA
MIN
-210
-210
-5
56
TYP
MAX
-1
-1
270
-0.6
UNIT
V
V
V
µA
µA
V
ETransition frequency
fT
VCE=-5V, IC= -2mA
30
MHz
JOutput capacitance
Cob VCE=-5V, IE=0,f=1 MHz
12 pF
WECLASSIFICATION OF hFE
Rank N P
Q
Range
56-120
82-180
120-270
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
Free Datasheet http://www.Datasheet4U.com


Part Number 2SA821S
Description PNP Transistor
Maker WEJ
Total Page 1 Pages
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