Download the 2SD780A datasheet PDF.
This datasheet also covers the 2SD780 variant, as both devices belong to the same npn epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for 2SD780A (Reference)
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2SD780A. For precise diagrams, and layout, please refer to the original PDF.
RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A DFEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector curren...
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EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage A OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Symbol Test conditions MIN NCollector-base breakdown voltage OCollector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic=0.1mA, IE=0 Ic=1mAIB=0 2SD780 2SD780A 2SD780 2SD780A 60 80 60 80 Emitter-base breakdown voltage V(BR)EBO IE=0.
2SD780A Datasheet
