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2SD874A - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Power dissipation TPCM: 500 mW (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

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Datasheet Details

Part number 2SD874A
Manufacturer WEJ
File Size 134.00 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD874A Datasheet

Full PDF Text Transcription for 2SD874A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD874A. For precise diagrams, and layout, please refer to the original PDF.

RoHS 2SD874A 2SD874A TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating an...

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or current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.