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B5817W - SCHOTTKY BARRIER DIODE

Key Features

  • DPower dissipation PD : 450 mW Tamb=25 TCollector current . ,LIF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range OTJ Tstg: -55 to +150.

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Datasheet Details

Part number B5817W
Manufacturer WEJ
File Size 553.06 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet B5817W Datasheet

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RoHS B5817W B5817W SCHOTTKY BARRIER DIODE FEATURES DPower dissipation PD : 450 mW Tamb=25 TCollector current .,LIF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range OTJ Tstg: -55 to +150 CMARKING SJ Unit mm ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ONParameter Reverse breakdown voltage RReverse voltage leakage current TForward voltage WEJ ELECDiodecapacitance Symbol Test conditions V(BR) IR VF CD IR= 1mA VR=20V IF=1A IF=3A VR=4V f=1MHz MIN MAX UNIT 20 1 0.45 0.75 120 V V WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com RoHS B5817W WEJ ELECTRONIC CO.,LTD WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com RoHS B5817W E A1 A2 0.20 cb D O.