TPower dissipation
PCM:
. ,LCollector current ICM: Collector-base voltage
V(BR)CBO:
500 -2 -32
mW (Tamb=25℃) A V
OOperating and storage junction temperature range CTJ, Tstg: -65℃ to +150℃
SOT-89
1. BASE 2.
Full PDF Text Transcription for BCP869 (Reference)
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RoHS BCP869 BC869 TRANSISTOR (PNP) DFEATURES TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 500 -2 -32 mW (Tamb=25℃) A V OOperating an...
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ctor-base voltage V(BR)CBO: 500 -2 -32 mW (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -65℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-0.1mA, IE=0 IC= -1mA , IB=0 IE=-0.1mA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -32 V -20 V -5 V -0.1 µA -0.
BCP869 Datasheet
