Full PDF Text Transcription for BCX20LT1 (Reference)
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BCX20LT1. For precise diagrams, and layout, please refer to the original PDF.
RoHS BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo...
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at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation FR-5 Board(1) Ta=25 PD 225 mw Derate above 25 1.8 mW/ Total Device Dissipation Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature ICStorage Temperature PD 300 2.
BCX20LT1 Datasheet
