TPower dissipation
PCM:
. ,LCollector current ICM: Collector-base voltage
V(BR)CBO:
0.5 -1 -45
W (Tamb=25℃) A V
OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2.
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BCX51. For precise diagrams, and layout, please refer to the original PDF.
RoHS BCX51 BCX51 TRANSISTOR (PNP) DFEATURES TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45 W (Tamb=25℃) A V OOperating and ...
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tor-base voltage V(BR)CBO: 0.5 -1 -45 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA, IE=0 IC= -10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -45 V -45 V -5 V -0.1 µA -0.
BCX51 Datasheet
