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MPSW56 - PNP Transistor

Key Features

  • Power dissipation TPCM: 1 W (Tamb=25℃) . ,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1.

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Datasheet Details

Part number MPSW56
Manufacturer WEJ
File Size 133.00 KB
Description PNP Transistor
Datasheet download datasheet MPSW56 Datasheet

Full PDF Text Transcription for MPSW56 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MPSW56. For precise diagrams, and layout, please refer to the original PDF.

RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating a...

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rrent ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3.