66-66
5.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. FΜ520-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AB / SMC
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.1
IO 5.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
IFSM
150 A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
IR
RθJA
RθJC
CJ
TSTG
0.5
mA
20
32 OC/W
16 OC/W
380 pF
-65 +175 OC
SYMBOLS
SS52
SS53
SS54
SS55
SS56
SS58
SS510
SS515
SS520
V
R
*
RM
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.55
0.70
0.85
0.90
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
WEJ ELECTRONIC CO./7' Http:// www.wej.cn E-mail:wej@yongerjia.com
