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WILLAS

8050HSLT1 Datasheet Preview

8050HSLT1 Datasheet

NPN Transistor

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EWEWůĂƐƚŝĐͲŶĐĂƉƐƵůĂƚĞdƌĂŶƐŝƐƚŽƌƐ
PRIMARY CHARACTERISTICS
PC 300mW
VCEO
25V
IC 1.5A
hFE@VCE=1V ,IC=100mA 
TJ Max
150
ϴϬϱϬ,^>dϭ
SOT-23 PACKAGE
Marking Code : Y1
FEATURES
Complimentary to SS8550
Moisture Sensitivity Level 1
MAXIMUM RATINGS (Ta=25unless otherwise noted)
MECHANICAL DATA
CASETRANSFER MOLDED
POLARITYAS MARKED
TERMINALSPURETIN PLATED
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
1.5
0.3
150
-55-150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min
V(BR)CBO IC= 100μA, IE=0
40
V(BR)CEO
V(BR)EBO
IC= 0.1mA, IB=0
IE=100μA, IC=0
25
5
ICBO
VCB=40V, IE=0
ICEO
VCE=20V, IE=0
IEBO VEB= 5V, IC=0
hFE(1)
VCE=1V, IC= 100mA 0
hFE(2)
VCE=1V, IC= 800mA
40
VCE(sat) IC=800mA, IB= 80mA
VBE(sat)
fT
IC=800mA, IB= 80mA
VCE=10V, IC= 50mA
f=30MHz
100
Typ Max Unit
V
V
V
0.1 μA
0.1 μA
0.1 μA
0
0.5 V
1.2 V
MHz
201ϱ.Ϭϵ
www.willas.com.tw
Rev. J0ϯ
P1




WILLAS

8050HSLT1 Datasheet Preview

8050HSLT1 Datasheet

NPN Transistor

No Preview Available !

EWEWůĂƐƚŝĐͲŶĐĂƉƐƵůĂƚĞdƌĂŶƐŝƐƚŽƌƐ
ϴϬϱϬ,^>dϭ
140
120
100
80
60
40
20
0
0.0
1000
Typical Characteristics
Static Characteristic
500uA
450uA
400uA
350uA
300uA
COMMON
EMITTER
T =25
a
250uA
200uA
150uA
100uA
I =50uA
B
0.5 1.0 1.5 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
VCEsat —— IC
2.5
hFE —— IC
1000
COMMON EMITTER
V =1V
CE
T =100
a
300
T =25
a
100
30
10
1
1.2
3
10 30
100 300
COLLECTOR CURRENT I (mA)
C
VBEsat —— IC
1000 1500
300
100
30
10
3
1
1
1500
1000
300
100
30
10
3
1
0.2
1000
T =100
a
T =25
a
3
10 30
100 300
COLLECTOR CURRENT I (mA)
C
VBE —— IC
β=10
1000 1500
T =100
a
T =25
a
COMMON EMITTER
V =1V
CE
0.4 0.6 0.8 1.0
BASE-EMMITER VOLTAGE V (V)
BE
1.2
fT —— IC
1.0
0.8 T =25
a
T =100
a
0.6
0.4
0.2
1
200
100
30
10
β=10
3
10 30
100 300
COLLECTOR CURRENT I (mA)
C
1000 1500
Cob/ Cib —— VCB/ VEB
f=1MHz
I =0/I =0
EC
C
ib
T =25
a
C
ob
3
1
0.1
350
0.3 1 3
REVERSE VOLTAGE V (V)
PC —— Ta
10 20
300
100
30
10
3
1
1
www.cj-elec.com
201ϱ.Ϭϵ
3 10 30
COLLECTOR CURRENT I (mA)
C
V =10V
CE
T =25
a
100
300
250
200
150
100
50
0
0
25 50 75 100 125
AMBIENT TEMPERATURE T ()
a
150
www.willas.com.tw
Rev. J0ϯ
A,Jun,20P124


Part Number 8050HSLT1
Description NPN Transistor
Maker WILLAS
Total Page 6 Pages
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