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WILLAS

BAS16T Datasheet Preview

BAS16T Datasheet

SWITCHING DIODE

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BAS16T pdf
WILLAS MMBD414F8MT120-M+
SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
BAS16FTM1T2H0R0U-M+
SOD-123+ PACKAGE
Pb Free Product
SWFEITACTHUFIRNBbeeEaGttaStcehtDruprIeOrroveDceersEsses
design,
leakage
excellent
current a
power diss
nd thermal
ipation offers
resistance.
z FastLSoww iptcrohfiilnegsuSrpfaecee dmounted application in order to
optimize board space.
z ForGLoewneporawlePr luosrps,ohsigehSewffiicticehnicnyg. Applications
z HighHCigohncduurrcetnat ncacpeability, low forward voltage drop.
z Pb-••FGHrieugaehrdspruairncggekfaocargpoeavebisrilvitaoyl.vtaagielapbroletection.
RoHUSltprarohdiguhc-st pfoeer dpsawciktcinhgingc.ode suffix ”G”
HaloSgielincofnreeepitparxoiadlupclatnfaorrcphaipc,kminegtalcsoildiceonsujufnficxtioHn.
z MoisLtMueIraLed-S-SfTreeDne-s1pi9at5irvt0si0tmy/2eL2ee8tveenlv1ironmental standards of
RoHS product for packing code suffix "G"
Marking: HMaMlogBeDn f4re1e4p8roTd:uKctAfo2r,packing code suffix "H"
MBeAcS1h6aTn:Aic2al data
Epoxy : UL94-V0 rated flame retardant
MaximumCaRseat:iMnogldse@d pTlaas=ti2c,5SOD-123H
Terminals
P:Palraatemdetteerrminals,
solderable
per
,
MSILy-mSTbDo-l750
Non-Repetitive PeakMReethvoedrs2e0V26oltage
Polarity : Indicated by cathode band
VRM
Package outline
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
1
2
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Limit
Unit
100
V
Dimensions in inches and (millimeters)
Peak RepMetoituivnetinPgePakosRiteiovner:sAenyVoltage
VRRM
WorkingPWeeaikghRte:vAeprpsreoVxiomltaatgeed 0.011 gram
DC Blocking Voltage
VRWM
VR
75
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RMS Reverse Voltage
Ratings at 25℃ ambient
temperature
unless
otherwise
speVcRif(iReMdS. )
53
FoSrinwgalerdphCaosnetihnaulfowuasvCe,u6r0reHnzt, resistive of inductive load. IFM
300
V
mA
  AvFeoracgaepaRcieticvetiflioeadd,Oduetrpautet Ccuurrerennt bt y 20%
IO
150
mA
Peak Forward SurgeRCAuTrIrNeGntS@t=1.0μs
Marking Code
@ t=1.0s
Maximum Recurrent Peak Reverse Voltage
Power Dissipation
Maximum RMS Voltage
SYMBOL FM120-MH FM130-MH FM1402-M.0H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
IFSM12 13 14 1.0 15 16
18 A10
115 120
VRRM
20
30
40
50
60
Pd 200
VRMS
14
21
28
35
42
80 100
mW
56 70
150 200 Vo
105 140 Vo
TMhaexrimmuaml RDeCsBislotacnkicneg VJoulntacgteion to Ambient
VDC RθJA20 30 40625 50 60
80 K/W100
150 200 Vo
JMunaxcitmiounmTAevmerapgeeraFtourwreard Rectified Current
IO Tj
150 1.0
Am
  Storage Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
  TSTG
IFSM
-55~+150
 
30
 
Am
ElsTeuycppeitcrriamilcpToahselerdRmoaanl tRrianetesgdissltoaan@dce(JTE(NaDoE=teC22m5)ethod)
Typical JunctionPCaarpaacmitaentceer (Note 1)
Operating Temperature Range
RSetovreargseeTebmrepearkadtuorewRnanvgoeltage
RΘJA
SymbCoJl
TJ
VT(SBRTG)
Min
75
 
 
-55Tytop+125 Max
Unit
V
40
120
 
 
 
Con-5d5ittioon+1s50
- 65 to +175 IR=1μA
P
 
VF1
0.715 V
IF=1mA
CHARACTERISTICS
FMoarxwimaurmd FvoorlwtaargdeVoltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VSFY2VMFBOL
FM120-MH
FM130-MH FM014.08-5M5H
0.50
FM150V-MH FM160-MH
0.70
FM180-IMF0=H.81F50Mm11A00-MH
FM1150-MH
0.9
FM1200-MH
0.92
UN
Vo
VF3IR
VF4
1.0 V
1.25 V
0.5 IF=50mA
10 IF=150mA
 
mA
 
RN1-eOMvTeeEaSrss:ueredcuatr1reMnHtZ
and
applied
reverse
voltage
of
4.0
IR1
VDIRC2.
1 μA
25 nA
VR=75V
VR=20V
  C2-aTphaecrmitaal nRceseisbtaenctwe Fereomn JtuenrcmtioinntaolAsmbient
CT
2 pF
VR=0V,f=1MHz
 
Reverse recovery time
trr
4 ns
IF=IR=10mA
Irr=0.1XIR,RL=100
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.



WILLAS
WILLAS

BAS16T Datasheet Preview

BAS16T Datasheet

SWITCHING DIODE

No Preview Available !

BAS16T pdf
WILLASSOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
-20V-
200V
MMBBADS1461FT4FM8MT1T12H20R00U--MM++
SOD-123+ PACKAGE
Pb Free Product
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
Typical CharacteristicsHigh current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12 13
14 15 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 V
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
IO
 
IFSM
RΘJA
CJ
TJ
TSTG
 
 
-55 to +125
1.0
 
30
40
120
 
- 65 to +175
 
 
-55 to +150
A
 
A
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
NOTES:
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85 0.9 0.92 V
IR
0.5  
m
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.


Part Number BAS16T
Description SWITCHING DIODE
Maker WILLAS
Total Page 3 Pages
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BAS16T pdf
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