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WILLAS

BAS20W Datasheet Preview

BAS20W Datasheet

Plastic-Encapsulate Diodes

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WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BBBAAASSS122FF901MMWWW1T12H20R00U--MM++
Pb Free Product
Features
Package outline
SWITCHIBNaGtch pDroIOceDssEdesign, excellent power dissipation offers
FzEATFUasRtELobSopSewwttitmeiptrcirzroheefivinbleeogrsasuSerdrplfeaseapcekeaadcmgeoe. ucnutrerdenatpapnlidc
thermal resistance.
ation in order to
SOT-3S2O3D-123H
z SurfaLcoew Mpoowuenr ltoPssa,chkigahgeeffiIcdieenaclyly. Suited for Automatic Insertion
High current capability, low forward voltage drop.
z ForGHeignhesruarlgPe cuarppaobsileityS. witching Applications
0.146(3.7)
0.130(3.3)
z HighGCuoanrddriuncgtfaonr coevervoltage protection.
z Pb-FUrelteraphaigchk-aspgeeedisswavitcahiliangb.le
RoH•• SLSeiplaicrdoo-ndfrueeceptiptafaoxrritasplmaplceakenitanergncvchiriopod,nemmesetunatflafsilxislitcaGonndjaurndcstioofn.
HalogMeInL-fSrTeDe-p19ro5d0u0c/2t 2fo8r packing code suffix “H”
1
z MoisRtuoHreS SpreodnuscittfiovriptyacLkiengvecold1e suffix "G"
Halogen free product for packing code suffix "H"
2
Mechanical data
Marking:EBpoAxSy :1U9LW94-V0KraAte8d flamBe rAetSa2rd1aWnt KT3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
CBasAeS: M20olWded plaKsTtic2, SOD-123H
MaximumTerRmaintainlsg:Psla@teTd ate=rm25inals,
solderable
per
,
MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
Polarity : PInadriacamteedtebry cathode band
Mounting Position : Any
Symbol BAS19W
BASD2im0enWsions in incBheAs San2d1(mWillimeters)
Peak RepWeetiigtihvte: ARpepvreorxsime aVtoeldta0g.0e11 gram
VRRM
100
150
DC Blocking Voltage
VR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Average Rectified Output Current
IO
200
Ratings at 25℃ ambient temperature unless otherwise specified.
PSoinwgeler pDhiassseiphaaltfiownave, 60Hz, resistive of inductive load. Pd
200
250
  TFhoerrcmapaalcRitievseilsotaadn, cder.aJteuncucrtrieonnt btyo2A0m%bient
RθJA
625
Unit
V
mA
mW
/W
Junction TemperatRurAeTINGS
2MSarHkUinDgWLCQoJdeStorage Temperature Range
Maximum Recurrent Peak Reverse Voltage
SYMBOL TFJM120-MH FM130-MH FM140-MH FM1501-M5H0FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
TSTG 12 13 14 -5155~+15016
VRRM
20
30
40
50
60
18
80
10
100
115105
120
200 Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Vo
EMLaExCimTumRDICCABlLockCinHg AVoRltaAgeCTERISTICS (Ta=2V5DC unle2s0s oth3e0rwise4s0pecif5ie0d) 60
80 100 150 200 Vo
Maximum Average Forward Rectified Current
IO
1.0 Am
      
Peak Forward SPurageraCmureretnetr8.3 ms single half sine-wave IFSM Symbol
Test conditions
3M0 in
Max
Unit
Am
superimposed on rated load (JEDEC method)
TRypeicvael rTsheermbrael Rakesdisotawnncev(oNlottaeg2e)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
BAS19WRΘJA
BAS20WCJ
BAS21WTJ
TSTG
V(BR)
 
IR=  100µA
-55 to +125
40100
121050
 
250
- 65 to +175
 
 
-55 to +150
V
℃/
P
  CHARACTERISTICS
BAS19W
SYMBOL
FM120-MH FMV1R3=0-1M0H0FVM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
MRaxeimveurmsFeovrwoaltrdagVeoltlaegaekaatg1e.0AcuDrCrent BAS20WVF
IR
VR=1500.5V0
0.70
0.805.1
µ0A.9 0.92 Vo
Maximum Average Reverse Current at @T A=25BAS21WIR
Rated DC Blocking Voltage
@T A=125℃
VR=200V
0.5
10
 
mA
 
NOFToErSw: ard voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-DTihoedrmeal cRaespisatacnitcaenFcroem Junction to Ambient
 
  Reveres recovery time
VF
IF=100mA
IF=200mA
CD VR=0V, f=1MHz
trr IF=IR=30mA,Irr=0.1×IR
1V
1.25
5 pF
50 ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.




WILLAS

BAS20W Datasheet Preview

BAS20W Datasheet

Plastic-Encapsulate Diodes

No Preview Available !

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BBBAAASSS122FF901MMWWW1T12H20R00U--MM++
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
Package outline
SOD-123H
optimize board space.
Typical CharacteristicsLow power loss, high efficiency.
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capFaobriwlitayr.d Characteristics
200
G
u
ar
dr
i
ng
for
overvoltage
protection.
100
Ultra high-speed switching.
Reverse Characteristics
1000
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
10MIL-STD-19500 /228
RoHS product for packing code suffix "G"
100
Ta=100
Halogen free product for packing code suffix "H"
Mechanical data
1
Epoxy : UL94-V0 rated flame retardant
10
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
0.T1 erminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
0.031(0.8) Typ.
1
Ta=25
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
0.0M1 ounting Position : Any
0.0 0.2 0.4 0.6 0.8
Weight : ApproFxOimRWaAteRdD 0VO.0LT1A1GgEramVF (V)
1.0
1.2
0.1
0.1
1 10
REVERSE VOLTAGE VR (V)
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive loadC, adpearactietacnucrereCnhtabryac2t0e%ristics Per Diode
Power Derating Curve
5 RATINGS
250
SYMBOTaL=2F5M120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
f=1MHz 12 13 14 15 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
20
30 200 40
50
60
VRMS
14
21
28
35
42
80 100 150 200 Vo
56 70 105 140 Vo
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Vo
Maximum 1Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IO
 
IFSM
RΘJA
CJ
TJ
150
100
 
 
-55 to +12550
1.0
 
30
40
120
 
 
 
-55 to +150
Am
 
Am
P
Storage Temperature Range
 
0.1
0 CH4ARACTERIS8 TICS
12
TSTG
- 65 to +175
0
SY16MBOL FM12200-MH FM130-MH FM0 140-MH FM21550-MH FM16500-MH FM1807-5MH FM110010-M0 H FM115012-M5 H FM1200-MH UN
Maximum Forward Voltage aRt E1V.0EARSDECVOLTAGE VR (V)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF
IR
0.50
AM0B.7IE0NT TEMPERATURE 0.T8j 5 ()
0.5
10
0.9 0.92 Vo
 
mA
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.


Part Number BAS20W
Description Plastic-Encapsulate Diodes
Maker WILLAS
Total Page 4 Pages
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