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WILLAS

BC856ADW1T1 Datasheet Preview

BC856ADW1T1 Datasheet

Dual General Purpose Transistors

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WILLAS
BC85xxDFWMT11HT2R10U-M+
Dual General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
ad••••peUGHHTspiliiluhgtggiracenhhaarsedscethdiruuioigrrfntngrhorgesae-r.nsfnlocptosTarceiwpsoahetavpedopebyarosrisblvwwiiatoliyieartlt.cetryrahe,sglihuoneordwgfpue.afrsscooieegrtdwenmcaeitordnidounnvft.otholeartapgpgSeleinOcdaerTtoria–pol3.n6sp3.urposwe hiacmhpliisfier
0.146(3.7)
0.130(3.3)
WSielicdoencleapreitathxaiatltphleanmaartcehriiapl, omf eptraoldsuilcict ocnomjupnlciatinocne. with RoHS requirements.
RLDMBeoeICHaLvd-8SiSc-5fpTe6rreDoAMed-D1uapc9rWatk5rfit01ons0rTgmp/1:2ae=c2ek83tinAegnvcoirdoenmsueffnixta"Gl s"tan
dards
of
HBaClo8g5e6nBfreDeWpr1oTdu1c=t f3oBr packing code suffix "H"
MBeCc8h57aBnDiWc1aTl1d=a3Fta
1
2
EBBpCCo88xy5578: CBUDDL9WW4-11VTT011r==at33eGKd flame retardant
CBaCs8e5: 8MCoDl dWe d1pTl a1s=t i c3,LS O D - 1 2 3 H
Terminals :Plated terminals, solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.012(0.3) Typ.
0.0671(1.85)
0.056(1.4)
4
3
SOT-363
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
MPAoXlaIrMitUy :MInRdAicTaItNedGbSy cathode band
Mounting RPaotsinitgion : Any
Symbol
BC856
BC857
BC858
Unit
Dimensions in inches and (millimeters)
WCoelliegchtto:r–AEpmpirtotexrimVoalttaegde0.011 grVaCmEO –65 –45 –30
V
Collector–Base Voltage
VCBO –80 –50 –30
V
EmitterM–BAasXeIMVoUltaMgeRATINGSVAEBNOD ELE5.C0 TRIC–5A.0L CHA5.R0ACTEVRISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phCaosCelleohcnattoilnfruwCoauuvrsere,n6t0Hz, resistive of inIdCuctive loa1d0.0
–100
–100 mAdc
  For capacitive load, derate current by 20%
(3) (2) (1)
Q1
Q2
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CToHdEe RMAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
(48) 0
10
10(05)
115 120
150 (6) 200
Volts
Maximum RMS VolCtahgaeracteristic
SymbolVRMS
M14ax 21 Un2it8
35
42
56 70
105 140 Volts
Maximum TDoCtaBl lDocekvinicgeVDoilstasgipeation
Per Device
PD VDC 23208500 30 mW40 50 60
80 100 150 200 Volts
Maximum AvFeRrag5e BFoorawrdar(dNRoetect1ifi.e)d Current
IO
1.0 Amps
  Peak ForwardDTSAeur=ragt2ee5CA°uCbrroevnet 82.35°mCs single half sine-wave
 
IFSM
3.0
mW/°C
 
30
 
Amps
superimposed on rated load (JEDEC method)
Thermal Resistance,
Typical ThermJuanl cRteiosnisttaonAcem(bNieontet 2)
Typical Junction Capacitance (Note 1)
RqJA RΘJA
CJ
328
  °C/W
 
40 DEVIC  E MARKING
120  
℃/W
PF
Operating JTueTnmecpmtieoprnaetaruanrteduRrSeatoRngraaenggee
Storage Temperature Range
TJ, Tstg TJ –55 to +15-055 to +125°C
TSTG
 
- 65 to +175
-55 to +150
  1. FR–5 = 1.0 x 0.75 x 0.062 in
See Table
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
  Rated DOCRBDlocEkRinIgNVGoltIaNgFeORMATION@T A=125℃
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
IR
0.5  
mAmp
10
1- Measured at 1 MHZ aDnedvaicppelied reverse voltage of 4.0 VDC. Shipping
2- Thermal Resistance From Junction to Ambient
  BC85xxDW1T1
3000/Tape & Reel
 
22001123--0067
WILLAWSILELLAESCTERLOENCICTRCOONRIPC. CORP.




WILLAS

BC856ADW1T1 Datasheet Preview

BC856ADW1T1 Datasheet

Dual General Purpose Transistors

No Preview Available !

WILLAS
D1.0uAaSUlRGFACeEnMeOUrNaTlSPCHuOrTTpKoY BsAeRRTIErRaRnECsTIiFsIEtRoS r-2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
BC85xxDWTH1TR1U
FM1200-M+
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
ELLEoCwTpRoIwCeArLloCssH,AhRigAh CefTfiEciReInScTy.ICS (TA = 25°C unless otherwise noted)
High current capability, lowCfhoarrwaacrtdervisotlitcage drop.
O••FGHFiugCahrHdsAruirnRggAefCocarTpoEavRebIriSlvitoTyl.ItCagSe protection.
Symbol
0.146(3.7)
0.130(3.3)
Min Typ
CoUlletrcatohr–igEhm-sitpteereBdresawkidtcohwinngV.oltage
S(IiClic=on1e0pmitAa)xial planar chip, metal siliconBjCu8n5c6tioSne.ries
Lead-free parts meet environmental stanBdCar8d5s7oSferies
MIL-STD-19500 /228
BC858 Series
V(BR)CEO
–65
–45
–30
CoRloleHcStorprEodmuictttefroBr rpeaackkdinogwncoVdoeltasugfefix "G"
H(IaClo=ge1n0frµeAe,pVroEdBu=ct0f)or packing code suffixB"HC"856 Series
Mechanical data
BC857 Series
V(BR)CES
–80
–50
Epoxy : UL94-V0 rated flame retardant BC858 Series
–30 –
CoC(lIlaCesc=eto–:r1–M0BoamlsAde)eBdrpelaaksdtoicw,nSVOoDlta-1g2e3H
Terminals :Plated terminals, solderable
BC856
pBeCr 8M5I7L
Series
-SSeTriDes-
,
750
V(BR)CBO
0.031(0.8) Typ.
–80
–50
Method 2026
BC858 Series
–30 –
Ma0x.012(0.3) TyUp.nit
0.071(1.8)
0.056(1.4)
V
V
0.040(1.0)
0.024(0.6)
V
0.031(0.8) Typ.
EmPiottlearritBya:sIenBdirceatkeddowbny cVaotlthaogdee band
M(IEou=nt1in.0g mPAo)sition : Any
Weight : Approximated 0.011 gram
BC856 Series
BC857 Series
BC858 Series
V(BR)EBDOimensions in inches and (millimeters)
–5.0 –
–5.0 –
–5.0 –
V
CCoolllleeccttoorrMCCuuAttooXffffIMCCuuUrrrrMeennttR((VVACCTBBI==N––G33S00 VVA,) TNAD= E15L0E°CC) TRICAL CHARACTERISTICICBOS
– –15 nA
– –4.0 µA
RatingOs Nat C25HARaAmCbiTenEtRteISmTpIeCraSture unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capDaCc(iItCCivu=err–loe1an0dt µ,GdAae,inrVaCteE c=urr5e.n0t Vb)y 20%BBCC885566BA, BC857B, BC858B
hFE – 90 – –
– 150 –
RATINGS
BC857C, BSCY8M5B8OCL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM18207-M0H FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Co(IdCe= –2.0 mA, VCE = –5.0 V) BC856A
12
13
14
15
11625
18180 10250 115
120
Maximum Recurrent Peak Reverse Voltage BC856B, BVCR8R5M7B, BC28058B 30
40
50
62020
80290 100475 150
200 Volts
Maximum RMS Voltage
BC857C, BVCR8M5S8C 14 21 28 35
MaximumCoD(lIlCCec=Btolo–rc1–k0EinmmgiAtVt,eoIrlBtaS=gaet–u0ra.5tiomnAV) oltage
VDC 20 30 40 VCE5(s0at)
Maximum A(IvCe=rage10F0ormwAar,dIBR=ecti5fie.0dmCAur)rent
IO
 
Peak ForBwaasrdeSuErmgeitCteurrrSeanttu8r.a3tmiosnsVinogllteaghaelf sine-wave
superimpos((eIIdCC o==n––ra11t00e0dmlmoAaA,dI,B(IJBE=D=–E0–C.55.m0memtAhA)od) )
Typical Thermal Resistance (Note 2)
TOyppeircaatlinJBguanT((scIIeCCetimo–==npEe––mCr21aai.0tt0ptueamrmrecAiOAtRa,,nanVVncVCeCgoEeE(ltN=a=og–t–ee55.10.0)VV))
 
IFSM
RΘJA
CJ
TJ
 
 
-55 to +125
VBE(sat)
VBE(on)
Storage Temperature Range
TSTG
  SMALL–SIGNAL CHARACTERISTICS
44220
56520 70800
60
1.0
 
80
1000.3
–0.65
30 –0.7
40
–0.9 
120  
  –0.6
-55
to
+––1005..78052
- 65 to +175
105
150V
V
V
140
200
 
Volts
Volts
Amps
Amps
℃/W
PF
Current–GaCinHARBAaCnTdEwRidItShTPICroSduct
SYMBOL FM120-MH FM130-MH FM140-MH FMfT150-MH FM11600-0MH FM180-MH FM1100-MH FM1150M-MHHz FM1200-MH UNIT
Maximum F(IoCrw=ard10VomltAag, eVaCtE1=.0A5D.0CVdc, f = 100 MHz) VF
0.50
0.70
0.85
0.9 0.92 Volts
MaximumOuAtvpeurtaCgeapRaecvietarsneceCurrent at @T A=25℃
Rated DC B(VloCcBkin=gV1o0ltVa,gfe= 1.0 MHz) @T A=125℃
IR
Cob
0.5
4.5 pF  
mAmps
10
  Noise Figure
NOTES: (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 k,
1- Measuredf a=t 11.M0 HkZHza,ndBWapp=lie2d0r0evHezrs)e voltage of 4.0 VDC.
NF – – 10 dB
2- Thermal Resistance From Junction to Ambient
 
 
2021021-30-607
WILLWAISLLEALSECETLREOCNTICROCNOIRCPC. ORP.


Part Number BC856ADW1T1
Description Dual General Purpose Transistors
Maker WILLAS
Total Page 7 Pages
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