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WILLAS
WILLAS

DAN222M Datasheet Preview

DAN222M Datasheet

SWITCHING DIODE

No Preview Available !

DAN222M pdf
WILLAS
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN222M THRU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SWITCHINopGtimDizIeObDoEard space.
Low power loss, high efficiency.
FEATUREHiSgh current capability, low forward voltage drop.
z Ultra ••SGHmiugaahrlldsruSirnuggerffaocarcpoeavebMrilvoitoyul.tnatgine gprTotyepcetion.
z Ultra HUigltrha Shipgeh-esdpeSewd sitwcihtcinhigngA. pplications
z
z
High ••RLSeeillaiicadob-nfirleeitepyiptaaxritaslmpleaentaerncvhiripo,nmmeetnatlaslislitcaonndjaurndcstioofn.
Pb-FreMeILp-aScTkDa-g19e5i0s0 a/2v2a8ilable
RoHSRporoHdSupcrot dfoucrtpfoarcpkaicnkgingcocoddee ssuuffffixix"G”G"
z
HalogMeHnealfcorgeheenapfrnreoeidcpuraocdltufdcotrafoptraapcakckiningg ccooddeesusfufixff"ixH"“H”
Moisture Sensitivity Level 1
Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
SOT-723 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
MARKINGC:aNse : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable
per
MI
L-
,
STD-750
Method 2026
MAXIMUMPoRlaAriTtyIN: InGdSica(teTda=by2c5athoudnelebasnsd otherwise noted )
SymboMlounting Position : Any
Parameter
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Value
Unit
VRRMWeight : ApPperaokxiRmeavteedrs0e.0V1o1ltgargaem
80 V
VRWM
MAWXIoMrkUinMg PReAaTk IRNeGveSrsAeNVDoltEagLeECTRICAL CHARACTERISTIC8S0
V
RaVtinRg(RsMaSt) 25℃ ambRieMnSt teRmepveerrasteurVe oulntalegses otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For caIOpacitive load, CdeornattiencuuoruresnFt boyrw2a0%rd Current
56 V
100 mA
IFM
PReaAkTIFNoGrSward Current
SYMBOL FM120-MH FM130-MH FM140-MH FM315000-MH FM160-MH FM180-MmH AFM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12 13
14 15 16
MaximIFuSmM Recurrent PNeaoknR-ReveeprseetiVtivoeltaPgeeak ForwardVSRRuMrge Cu2r0rent (t=310µs) 40 504 60
18 10
80 A 100
115 120
150 200 Vo
MaximPumD RMS VoltagPe ower Dissipation
VRMS
14
21
28
31550 42
56 mW 70
105 140 Vo
Maximum DC
RθJA
Blocking Voltage
Thermal
Resistance
from
JunVctDioCn
to
20
Ambient
30
Maximum Average Forward Rectified Current
IO
40 50 60
80 100
833 1.0 /W
150 200 Vo
Am
  Tj
Junction Temperature
 
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
150  
30
superiTmsptogsed on rated lSoatodr(aJEgDeETCemmeptheorda)ture
-55~+150
Typical Thermal Resistance (Note 2)
RΘJA
 
ELTEypCicTalRJuICncAtioLn CCaHpaAcitRanAceC(NToEteR1I)STICS(Ta=25CJunless otherw  ise specified)
40
120
Operating Temperature Range
StoraPgaerTaemmepeterarture Range
Symbol
TJ
TSTG
-55 to +125
Test conditions
 
M- 6in5
to
Typ
+175
 
 
-55 to +150
Max
Unit
 
Am
P
Re verse voltage
=V(BR) IR 100uA
80 V
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RevMearsxiemucmurFroernwtard V=oltage at 1.0A DC IR VVRF 70V
0.50 0.70
0.85 0.1
0µ.A9 0.92 Vo
ForwMaaxridmuvmolAtavegreage Re=verse Current at @VTF A=25℃ IFIR 100mA
Rated DC Blocking Voltage
@T A=125℃
0.5
1.2 V
 
mA
10
To tal capacitance
NOTES:
==Ctot VR 6V,f 1MHz
Rev1e- rMseeasruerecdoavte1rMyHtZimaned applied reverse votrlrtage of 4.0 VDCI.F= IR=5mA, VR=6V,RL=50Ω
3.5 pF
4 ns
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.



WILLAS
WILLAS

DAN222M Datasheet Preview

DAN222M Datasheet

SWITCHING DIODE

No Preview Available !

DAN222M pdf
WILLAS
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN222MTHRU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
Outline Drawingoptimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.049(1.25)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
.045(1.15)
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
Package outline
S O T- 7 2 3SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
.007(0.17)
RATINGS
Marking Code
.003(0.8)Maximum Recurrent Peak Reverse Voltage
.003(0.07)SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12 13 14 15 16
18 10
115 120
VRRM
20
30
40
50
60
80 100 150 200 Volt
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volt
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volt
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IO
 
IFSM
RΘJA
CJ
TJ
 
 
-55 to +125
1.0
 
30
40
120
 
 
 
-55 to +150
Am
 
Am
℃/W
PF
Storage Temperature Range
 
TSTG
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volt
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.011(0.27) 
@T A=125℃
IR
0.5  
mAm
10
NOTES:
.006(0.15)1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRROeNv.ICC CORP.
WILLAS ELECTRONIC CORP.


Part Number DAN222M
Description SWITCHING DIODE
Maker WILLAS
Total Page 2 Pages
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