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WILLAS

DTA144EUA Datasheet Preview

DTA144EUA Datasheet

PNP Digital Transistor

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WILLAS
FM120-M+
DTA144EUA THRU
1.0PANSUPRFDACigE iMtOaUl NTTrSaCnHOsTisTKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
Featuresoptimize board space.
Low power loss, high efficiency.
Pb-FreHeigphaccurkraengtecaipsaabivlitayi,llaowblfeorward voltage drop.
RoHS•• pGHriugoahdrdsurucirngtgeffoocrar popavaebcrilvkitoiynl.tgagceopdroetescutifofnix. ”G”
SOT-3230.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
HalogeUnltrfareheigph-rsopdeuedctswfoitrchpiangc.king code suffix “H”
EpoxymSileiceotsn eUpLita9x4iaVl p-l0anflaarmchmipa, bmileittyalrsaitliicnogn junction.
0.071(1.8)
0.056(1.4)
MoisureLeSaedn-fsreiteivpitayrtLsemveeelt1environmental standards of
Built-in MbiIaLs-SrTeDs-is1t9o5r0s0e/n22a8ble the configuration of an inverter circuit
withoutRcooHnSnpercotdinucgt feoxr tpearcnkainlgincopduet sruefsfiixs"tGor"s
TishoelabtiMoianHseatrlocoegsaheilsnlaotfowrnerseincpecroagonadlustidcivsteatfoobtrfaipatahsciiknning-fgiolcmfodtrheeessuiisnfftipxour"sHt."wThitheycoamlsoplheateve the
advantaEgpeoxoyf:aUlmL9o4s-tVc0ormatepdleftlealmyeerleimtairndaatnint g parasitic effects.
0.040(1.0)
.010(0.20.50)24(0.6)
Odenvlyicte••hTCedeeaorssmneig/ion:naMffeloscalo:dsPneyladdtipetildoanstetsircmn, eiSneOadlDst-,o1s2ob3ledHesreabt lfeopr eorpMeIrLa-tSioTnD,-m75a0k,ing
0.031(0.8) Typ.
.003(0.08)
0.031(0.8) Typ.
Method 2026
AbsolutePmoalaxriitmy :uImndircaatteindgbsy c@at2ho5dкe band
.087(2.20)
Dimensions in inches and.0(m70ill(im1.e8t0e)rs)
Symbol Mounting PosPitairoanm:eAtenry
Min Typ Max Unit
VCC WSuepipglhytv:oAltpagperoximated 0.011 gram --- -50 ---
V
VIN Input voltage
-40 --- 10
V
IO
IC(MAX)
OutputMcuArreXnItMUM RATINGS AND E--L- ECT--13R000ICAL---CHARmACTERISTICS
RPad tings aPt o2w5℃er daismsibpiaetniotntemperature unless otherw--i-se spe2c0i0fied. ---
mW
STijngle phJausnechtioanlf tweamvpee,r6a0tuHrez, resistive of inductive--lo- ad. 150 ---
ć
  TFsotgr capacSittiovreagloeatde,mdpeeraratetucreurrent by 20%
-55 --- 150
ć
.056(1.40)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-M.0H47F(M1.12800)-MH FM1100-MH FM1150-MH FM1200-M
EleMcatrrkiincgaCloCdhe aracteristics @ 25к
12 13
14
SyMmabxoiml um Recurrent PeakPaRreavmeresteerVoltage
MiVnRRM Typ 20 Max 30Unit 40
VMI(aofxf)imum RInMpuSt Vvoollttaaggee (VCC=-5V, IO=-100­A)
-0.V5RMS --- 14 --- 21 V 28
VMI(aonx)imum DC Blocking V(oVltOa=g-e0.3V, IO=-2mA)
---VDC --- 20 -3.0 30 V 40
VMOIa(Ioxn)im=um AOInvupeturpatugcteuvroFrelotnarwtg=(aeVr(dIIOR-/5IeIVc-)t1ifi0emd AC/u-0rr.e5nmt A
--- ---
--- IO ---
 
IPOGe(oaIffk) ForwaODrdCutSpcuuurtgrreceunCrturegrrnaetinn(tV8(VC.3CO==m=--5s50sV=Vin,,gIOVleI h-50am)lf sAin) e-wave
--- 
68IFSM
---
---
sRup1erimposIendpuont rreasteisdtalonacde(JEDEC method)
32.9 47
RT2y/Rpi1cal TheRremsaisl tRaensciestraantcioe (Note 2)
0.8RΘJA 1.0
TOfypTpeircaatlinJgunT(TVcertaOimon=nps-eiCt1rioa0antVpua,rfrecIeOitR=qa5uanmencnegAce(,yNf=ot1e010)MHz)
--- CJ 250
TJ
-0.3 V
-0.18 mA
-0.5 ­A
---
61.1
1.2
  K¡
 
--- MHz
-55 to +125
15 16
50 60
18 10
115
80 100 150
35 42
56 70
105
50 .004(06.100)MAX. 80 100 150
1.0
 
30
.016(0.40)
40 .008 (0.20)
120  
Dim ensions in inche-5s5antod+(m15il0limeters)
120
200
140
200
 
Storage Temperature Range
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160S-MuHgFgMe1s8t0e-MdHSFMo1l1d0e0-rMH FM1150-MH FM1200-MH
VF
0.50
0.70 Pad La0y.8o5ut
0.9 0.92
Maximum Average Reverse Current at @*TMA=a2r5king: 16IR
Rated DC Blocking Voltage
@T A=125℃
 
0.05.70
10
0.90
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
 
 
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.




WILLAS

DTA144EUA Datasheet Preview

DTA144EUA Datasheet

PNP Digital Transistor

No Preview Available !

WILLAS
FM120-M+
DTA144EUA THRU
1.0PANSUPRFDACigE iMtOaUl NTTrSaCnHOsTisTKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
12 13
14 15
16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
IO
 
IFSM
RΘJA
CJ
TJ
TSTG
 
 
-55 to +125
1.0
 
30
40
120
 
- 65 to +175
 
 
-55 to +150
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
NOTES:
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50 0.70
0.85 0.9 0.92
IR 0.5  
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.


Part Number DTA144EUA
Description PNP Digital Transistor
Maker WILLAS
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DTA144EUA Datasheet PDF






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