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WINSEMI SEMICONDUCTOR

SBP13007-X Datasheet Preview

SBP13007-X Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SBP13007-X
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply and inverters motor controls
B
C
E
TO220
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
600
400
9.0
12
24
6.0
12
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.25
40
Units
/W
/W
Jan 2008. Rev. 0
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3




WINSEMI SEMICONDUCTOR

SBP13007-X Datasheet Preview

SBP13007-X Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

www.DataSheet4U.com
SBP13007-X
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
VCEO(sus) Collector-Emitter Breakdown Voltage
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
ICBO
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Test Conditions
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
I Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Vcb=600V
Value
Units
Min Typ Max
400 -
-V
1.0
- - 1.5 V
3.0
1.2
--
V
1.6
- - 100 nA
Vce=5V,Ic=5.0A
Vce=5V, Ic=8.0A
8 - 40
6-
-
VCC=125V , Ic=6.0A
IB1=1.6A , IB2=-1.6A
Tp=25
-
1.5 3.0
0.17 0.4
VCC=15V ,Ic=5A
IB1=1.6A , Vbe(off)=5V
L=0.35mH,Vclamp=300V
- 0.8 2.0
-
0.04 0.1
VCC=15V ,Ic=1A
IB1=0.4A , Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100
-
-
0.8 2.5
0.05 0.15
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
2/5


Part Number SBP13007-X
Description High Voltage Fast-Switching NPN Power Transistor
Maker WINSEMI SEMICONDUCTOR
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SBP13007-X Datasheet PDF






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