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SBW3320 Datasheet High Voltage Fast-Swit NPN Power Transistor

Manufacturer: WINSEMI SEMICONDUCTOR

Datasheet Details

Part number SBW3320
Manufacturer WINSEMI SEMICONDUCTOR
File Size 580.07 KB
Description High Voltage Fast-Swit NPN Power Transistor
Download SBW3320 Download (PDF)

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms TO247 SBW3320W Value 500 400 7.0 15 30 5.0 10 80 150 -65 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol Parameter RθJc Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W Jal 2011 .Rev.2 Copyright@Winsemi Microele

Overview

SBW3320 High Voltage Fast-Switching NPN Power Transistor.

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA TO3P SBW3320 General.