WFP10N60 Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
WFP10N60 Key Features
- 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested I