Full PDF Text Transcription for WFP10N60 (Reference)
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WFP10N60. For precise diagrams, and layout, please refer to the original PDF.
75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
WFP10N60 Datasheet
