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WINSEMI SEMICONDUCTOR

WFP10N60 Datasheet Preview

WFP10N60 Datasheet

Silicon N-Channel MOSFET

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Features
10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V
Ultra-low Gate Charge(Typical 34nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(VISO=4000V AC)
Improved dv/dt capability
WFP10N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a highrugged avalanche
characteristics. This devices is specially wellsuited for high efficiency
switch mode power supplies , power factor correction, UPS and a
electronic lamp ballast base on half bridge.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
10*
6.0*
40*
±30
713
18
4.5
150
0.4
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 0.83 /W
- - 62.5 /W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WFP10N60 Datasheet Preview

WFP10N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics(Tc=25)
WFP10N60
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
- - ±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 -
-V
Drain cut -off current
IDSS VDS=600V,VGS=0V
- - 1 µA
Drain -source breakdown voltage
V(BR)DSS ID=250 µA,VGS=0V
600 -
-V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3 - 4.5 V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.75A
-
0.66 0.75
Forward Transconductance
gfs VDS=50V,ID=4.75A
- 8.2 - S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 1610 2065
- 156 210 pF
- 20 26
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=300V,
- 68 91
ton ID=10A
tf RG=25Ω
- 109 150
ns
- 214 300
toff
(Note4,5) -
85 165
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=480V,
VGS=10V,
ID=10A
(Note4,5)
-
-
-
34 45
nC
6.9 -
12 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
- - - 10 A
Pulse drain reverse current
IDRP
- - - 38 A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
- 1.05 1.4 V
Reverse recovery time
Reverse recovery charge
trr IDR=10A,VGS=0V,
Qrr dIDR / dt =100 A / µs
- 442 633 ns
- 2.16 3.24 µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14.5mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFP10N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFP10N60 Datasheet PDF






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