WFP12N65 Overview
Description
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Key Features
- 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 51.7nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
