Datasheet4U Logo Datasheet4U.com

WFP12N65 - Silicon N-Channel MOSFET

Description

Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 51.7nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet preview – WFP12N65

Datasheet Details

Part number WFP12N65
Manufacturer WINSEMI SEMICONDUCTOR
File Size 635.33 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP12N65 Datasheet
Additional preview pages of the WFP12N65 datasheet.

📁 Similar Datasheet

  • WFP12N60 - N-Channel MOSFET (Wisdom technologies)
  • WFP10N60 - N-Channel MOSFET (Wisdom technologies)
  • WFP13N50 - Silicon N-Channel MOSFET (Winsemi)
  • WFP13N50C - Silicon N-Channel MOSFET (Winsemi)
  • WFP18N50 - Silicon N-Channel MOSFET (Winsemi)
  • WFP2N60 - N-Channel MOSFET (Wisdom technologies)
  • WFP3205 - Silicon N-Channel MOSFET (Winsemi)
  • WFP3205T - Silicon N-Channel MOSFET (Winsemi)
  • WFP4N60 - N-Channel MOSFET (Wisdom technologies)
  • WFP50N06 - Silicon N-Channel MOSFET (Winsemi)
Other Datasheets by WINSEMI SEMICONDUCTOR

Full PDF Text Transcription

Click to expand full text
www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Published: |