900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WINSEMI SEMICONDUCTOR

WFP12N65 Datasheet Preview

WFP12N65 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
WFP12N65
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC-DCswitching power supplies, DC-DCpower converters,
high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
12
±30
990
22
4.5
178
1.43
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 0.70
--
-
- - 62.5
Units
/W
/W
/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WFP12N65 Datasheet Preview

WFP12N65 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 650 V, VGS = 0 V
IDSS
VDS = 480 V, Tc = 125
Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 6A
Forward Transconductance
gfs VDS = 50 V, ID = 6A
Input capacitance
Ciss VDS = 25 V,
Reverse transfer capacitance
Crss VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Rise time
tr VDD =325 V,
Switching time
Turn−on time
Fall time
ton ID =12A
tf RG=25 Ω
Turn−off time
toff
(Note4,5)
Total gate charge (gate−source
VDD = 520 V,
Qg
plus gate−drain)
VGS = 10 V,
Gate−source charge
Qgs ID = 12 A
Gate−drain (“miller”) Charge
Qgd
(Note4,5)
WFP12N65
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
0.64
6.4
1830
155
2.0
50
49
310
54
Max
±100
-
10
100
-
4
0.8
-
-
-
-
-
-
-
-
Unit
nA
V
μA
μA
V
V
Ω
S
pF
ns
- 51.7 -
nC
- 9.6 -
- 18.6 -
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
-
-
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
-
-
-
-
Type
-
-
-
450
5.0
Max
12
48
1.4
-
-
Un
it
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25
3.ISD≤12A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFP12N65
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
PDF Download

WFP12N65 Datasheet PDF






Similar Datasheet

1 WFP12N60 N-Channel MOSFET
Wisdom technologies
2 WFP12N60 Silicon N-Channel MOSFET
WINSEMI SEMICONDUCTOR
3 WFP12N65 Silicon N-Channel MOSFET
WINSEMI SEMICONDUCTOR





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy