Datasheet Details
| Part number | WFP12N65 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 635.33 KB |
| Description | Silicon N-Channel MOSFET |
| Download | WFP12N65 Download (PDF) |
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| Part number | WFP12N65 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 635.33 KB |
| Description | Silicon N-Channel MOSFET |
| Download | WFP12N65 Download (PDF) |
|
|
|
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) ±30 990 22 4.5 178 1.43 -55~150 300 A A V mJ mJ V/ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 650 12 Units V A Channel Temperature Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 0.70 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET.
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