WFP8N60 Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - - 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28n C) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 7.5 4.5 30 ±30 240 15 4.5 145 1.15 -55~150 300 Units V A A A V m J m J V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.86 62.5 Units ℃/W ℃/W ℃/W Rev.A Aug.2010 Copyright@Win Semi Semiconductor Co., Ltd., All right reserved. .Data Sheet.in Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type 0.8 6.4 1100 135 16 30 80 65 60 28 7...