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WFP8N60 Datasheet Preview

WFP8N60 Datasheet

Silicon N-Channel MOSFET

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WFP8N60 Product Description
Silicon N-Channel MOSFET
Features
7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
Ultra-low Gate charge(Typical 54nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially well suited for half
bridge and full bridge resonant topology line a electronic lamp ballast,
high efficiency switched mode power supplies, active power factor
correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
600
7.5
4.4
28
±30
420
7
14.7
5.5
147
1.18
-55~150
300
Units
V
A
A
A
V
mJ
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 0.85 /W
- - 62.5 /W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F053-Rev.A0 Oct.2013
WIN SEM I M ICROELECTRON ICS
1008




WINSEMI SEMICONDUCTOR

WFP8N60 Datasheet Preview

WFP8N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

WFP8N60 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
IDSS
Drain -source breakdown voltage
Breakdown Voltage temperature Coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
∆BVDSS/∆TJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=480V,Tc=125
ID=250 µA,VGS=0V
ID=250 µA,Referenced to 25
VDS=VGS,ID=250 µA
VGS=10V,ID=3.75A
VDS=40V,ID=3.75A
VDS=25V,
VGS=0V,
f=1MHz
VDD=300V,
ID=7.5A
RG=25Ω
(Note4,5)
VDD=480V,
VGS=10V,
ID=7.5A
(Note4,5)
Min
-
±30
-
-
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
0.65
-
1.0
8.2
1380
23
115
80
30
85
125
54
6.8
23
Max
±100
-
10
100
-
-
4
1.2
-
1800
30
150
170
70
180
260
Unit
nA
V
µA
µA
V
V/
V
S
pF
ns
65
nC
-
-
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=7.5A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Min Type Max Unit
- - 7.5 A
- - 28 A
- - 1.4 V
- 415 - ns
- 4.6 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15.7mH IAS=7.5A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
2/8


Part Number WFP8N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFP8N60 Datasheet PDF






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