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WINSEMI SEMICONDUCTOR

WSP10D100 Datasheet Preview

WSP10D100 Datasheet

Power Schottky Rectifier

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WSP10D100
Power Schottky Rectifier
Features
10A(1×5A),100V
VF(max)=0.60V(@TJ=125)
Low power loss, high efficiency
Common cathode structure
Guard ring for over voltage protection, High reliability
Maximum Junction Temperature Range(175)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
K
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
VDRM
VDC
IF(RMS)
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
IF(AV)
Average forward current
IFSM
IRRM
dv/dt
TJ,
Tstg
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
100
100
10
5
10
150
1
10000
175
-40~150
Units
V
V
A
A
A
A
V/ns
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min Typ Max
- - 1.3
0.3 -
-
Units
/W
/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
www.DataSheet.in




WINSEMI SEMICONDUCTOR

WSP10D100 Datasheet Preview

WSP10D100 Datasheet

Power Schottky Rectifier

No Preview Available !

Electrical Characteristics (per diode)
Characteristics Symbol
Test Condition
Reverse leakage current
IR
Forward voltage drop
VF
Note :tp = 380 μs, δ < 2%
VR = VRRM
IF= 5A
IF= 210A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
WSP10D100
Min Typ. Max Unit
- - 10 μA
- 5 mA
- 0.71 0.75
- 0.56 0.60
V
- 0.78 0.85
- 0.65 0.7
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Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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Part Number WSP10D100
Description Power Schottky Rectifier
Maker WINSEMI SEMICONDUCTOR
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WSP10D100 Datasheet PDF






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