WSP20D65 Datasheet Power Schottky Rectifier

Manufacturer: WINSEMI SEMICONDUCTOR

WSP20D65 power schottky rectifier by WINSEMI SEMICONDUCTOR - Datasheet Preview

Datasheet Details

Part number	WSP20D65
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	338.52 KB
Description	Power Schottky Rectifier
Datasheet	WSP20D65 Datasheet

General Description

Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications.

A1 K A2 TO220 Absolute Maximum Ratings Symbol VDRM VDC IF(RMS) IF(AV) IFSM PARM IRRM dv/dt TJ, Tstg Parameter Repetitive peak reverse voltage Maximum DC blocking voltage RMS forward current per diode Average forward current per device Surge non repetitive forward current Repetitive peak avalanche power Repetitive peak reverse current Critical rate of rise of reverse voltage Junction Temperature Storage Temperature Value 65 65 30 10 Units V V A A 20 150 5800 1 10000 175 -40~150 A W A V/ns ℃ ℃ Thermal Characteristics Symbol RQJC RQCS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Value Min 0.1 Typ - Max 1.9 - Units ℃/W ℃/W Rev.

Overview

www.DataSheet.in WSP20D65 Power Schottky Rectifier.

Key Features

20A(1×10A),65V.
VF(max)=0.68V(@TJ=125℃).
Low power loss, high efficiency.
Common cathode structure.
Guard ring for over voltage protection, High reliability.
Maximum Junction Temperature Range(175℃) General.

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