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WINSEMI SEMICONDUCTOR

WTD8A60 Datasheet Preview

WTD8A60 Datasheet

Sensitive Gate Triac

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Features
Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=8A)
High Commutation dv/dt
Isolation Voltage (VISO=1500V AC)
WTD8A60
Sensitive Gate Triac
General Description
Sensitive gate triggering Triac is suitable for direct couplingto
TTL , CMOS and application such as various logic Functions, low
power AC switching applications,such as fanspeed,small light
controllers and home appliance equipment.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=89
ITSM Surge On-State Current
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t I2t
PGM Peak Gate Power Dissipation
PG(AV) Average Gate Power dissipation
IGM Peak Gate Current
VGM Peak Gate Voltage
VISO Isolation Breakdown voltage(R.M.S.) A.C 1 minute
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
8.0
80/88
32
5.0
0.5
2.0
10
1500
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
V
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
Value
3.7
Units
/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WTD8A60 Datasheet Preview

WTD8A60 Datasheet

Sensitive Gate Triac

No Preview Available !

www.DataSheet.in
Electrical Characteristics(Tc=25unless otherwise noted)
Symbol
Items
conditions
IDRM
VTM
I+GT1
I-
I-
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Repetitive Peak Off-State
Current
VD=VDRM,Single Phase, Half
Wave TJ=125
Peak On-State Voltage
IT=12A,Inst.Measurement
Gate Trigger Current VD=6V,RL=10Ω
Gate Trigger Voltage VD=6V,RL=10Ω
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
TJ=125℃,VD=1/2VDRM
TJ=125℃,[di/dt]c=-4.0A/ms,
VD=2/3VDRM
Holding Current
WTD8A60
Ratin
Unit
Min Typ Max
- - 2.0 mA
- - 1.4 V
- - 30
- - 30 mA
- - 30
- - 1.5
- - 1.5 V
- - 1.5
0.2 - - V
10 -
- V/µs
- 15 - mA
Steady, all for your advance
2/5


Part Number WTD8A60
Description Sensitive Gate Triac
Maker WINSEMI SEMICONDUCTOR
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