WTF4A60 Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - - - Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) High mutation dv/dt Isolation Voltage ( VISO = 1500V AC ) High Junction temperature(TJ=150℃) General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. A1 A2 G TO220F Absolute Maximum Ratings (T = 25°C unless otherwise specified) Symbol VDRM /VRRM IT(RMS) ITSM Parame Repetitive Peak ter Off-State Voltage R.M.S On-State Current Surge On-State Current TJ = 105 °C Condition Ratings Units 600 4.0 50Hz 60Hz 30 A 31 5.1 5 A2 s W W A V ℃ ℃ V A One cycle, Peak value, non-repetitive full cycle It PGM PG(AV) IGM VGM TJ TSTG I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature TJ = 125 °C TJ = 125 °C 1 4.0 7.0 -40~+150 -40~+150 Thermal Characteristics Symbol RθJc RθJA Parameter Value 4 60 Units ℃/W ℃/W Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Jan 2009. Rev. 0 Copyright @Win Semi Semiconductor Co.,Ltd.,All rights reserved. T02-1 .Data Sheet.in 4A60 WTF TF4 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol IDRM/IRRM Characteristics off-state leakage current (VAK= VDRM/VRRM Single phase, half wave) Forward “On” voltage (IT=5A, Inst. Measurement) Gate trigger current (continuous dc) (VAK = 6 Vdc, RL = 10 Ω) Note:1 T2+,G+ T2+,GT2-,GT2+,G+ T2+,GNote:1 Gate threshold Voltage T2-,GTJ=125℃ TJ=25℃...