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WINSEMI SEMICONDUCTOR

WTF4A60 Datasheet Preview

WTF4A60 Datasheet

Bi-Directional Triode Thyristor

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WTF4A60
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
High Junction temperature(TJ=150)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
A1
A2
G
TO220F
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parame
VDRM/VRRM Repetitive Peak tOefrf-State Voltage
I
T(RMS)
R.M.S On-State Current
I
TSM
Surge On-State Current
I2t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Condition
T = 105 °C
J
One cycle, Peak value,
non-repetitive full cycle
50Hz
60Hz
T = 125 °C
J
T = 125 °C
J
Ratings Units
600 V
4.0 A
30
A
31
5.1 A2s
5W
1W
4.0 A
7.0
-40~+150
-40~+150
V
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Value
4
60
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1




WINSEMI SEMICONDUCTOR

WTF4A60 Datasheet Preview

WTF4A60 Datasheet

Bi-Directional Triode Thyristor

No Preview Available !

www.DataSheet.in
WTF4A60
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Characteristics
IDRM/IRRM
off-state leakage current
(VAK= VDRM/VRRM Single phase, half wave)
Min Typ. Max Unit
TJ=25
-
-
5 μA
TJ=125- - 1 mA
VTM Forward “On” voltage (IT=5A, Inst. Measurement)
-
1.2 1.6
V
Gate trigger current (continuous dc)
IGT (VAK = 6 Vdc, RL = 10 Ω)
Note:1
T2+,G+
T2+,G-
T2-,G-
-
-
-
- 35
- 35 mA
- 35
Gate Trigger Voltage (Continuous dc) )
T2+,G+
-
- 1.5
VGT (VAK = 6 Vdc, RL = 10 Ω)
T2+,G- - - 1.5 V
Note:1
T2-,G-
- - 1.5
Gate threshold Voltage
VGD =1/2VDRM, RL = 3.3K Ω
TJ=125
dv/dt
Critical Rate of Rise of Off-State Voltage at Commutation
TJ=125
(VD=0.67VDRM ;gate open)
Note:2
IH Holding Current
IL latching current
Note 1: minimum IGT is guaranted at 5% of IGT max.
2: for both polarities of A2 referenced to A1.
0.2
400
-
-
-
-
-
-
-V
- V/μs
35 mA
60 mA
Steady, all for your advance.
2/5


Part Number WTF4A60
Description Bi-Directional Triode Thyristor
Maker WINSEMI SEMICONDUCTOR
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