900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WINSEMI SEMICONDUCTOR

WTPA24A60BW Datasheet Preview

WTPA24A60BW Datasheet

Bi-Directional Triode Thyristor

No Preview Available !

www.DataSheet.in
WTPA24A60BW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage:600V
■R.M.S On-State Current(IT(RMS)=24A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides
Voltage insulated tab (rated at 2500V RMS)
Absolute Maximum Ratings (TJ=25unless otherwise specified)
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ,
Tstg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, Tc=58)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
Value
600
24
250/260
340
5
1
4
10
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.7
- - 60
Units
/W
/W
Rev. B Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3




WINSEMI SEMICONDUCTOR

WTPA24A60BW Datasheet Preview

WTPA24A60BW Datasheet

Bi-Directional Triode Thyristor

No Preview Available !

www.DataSheet.in
WTPA24A60BW
8
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Characteristics
IDRM//IRRM
Peak Forward or Reverse Blocking Current
(VDRM=VRRM,)
Tc=25
Tc=125
VTM
IGT
VGT
VGD
dV/dt
dIcom/dt
IH
IL
Rd
Forward “On” Voltage(Note2) (ITM = 35A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 33Ω)
T2+G+
T2+G-
T2-G-
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33Ω)
T2+G+
T2+G-
T2-G-
Gate threshold voltage(Tj=125, VD= VDRM , RL = 3.3kΩ)
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
Critical rate of rise On-State voltage(VD=400V,Tj=125)
Holding Current (IT= 500 mA)
IG=1.2IGT
Dynamic resistance
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
Min
-
-
-
-
-
-
-
-
-
0.2
1000
22
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5
3
1.55
50
50
50
1.2
1.2
1.2
-
-
-
80
100
16
Unit
μA
mA
V
mA
V
V
V/μs
A/μs
mA
mA
2/5
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.


Part Number WTPA24A60BW
Description Bi-Directional Triode Thyristor
Maker WINSEMI SEMICONDUCTOR
PDF Download

WTPA24A60BW Datasheet PDF






Similar Datasheet

1 WTPA24A60BW Bi-Directional Triode Thyristor
WINSEMI SEMICONDUCTOR





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy