www.DataSheet.in
WTPA24A60BW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage:600V
■R.M.S On-State Current(IT(RMS)=24A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides
Voltage insulated tab (rated at 2500V RMS)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ,
Tstg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
Value
600
24
250/260
340
5
1
4
10
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
℃
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.7
- - 60
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3
