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WTPB12A60CW Datasheet, WINSEMI SEMICONDUCTOR

WTPB12A60CW Datasheet, WINSEMI SEMICONDUCTOR

WTPB12A60CW

datasheet Download (Size : 270.49KB)

WTPB12A60CW Datasheet

WTPB12A60CW thyristor equivalent, sensitive gate bi-directional triode thyristor.

WTPB12A60CW

datasheet Download (Size : 270.49KB)

WTPB12A60CW Datasheet

Features and benefits


* Repetitive Peak off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=12A
* Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
* High Commutation dV/dt. .

Application

These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low powe.

Description

General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation cont.

Image gallery

WTPB12A60CW Page 1 WTPB12A60CW Page 2 WTPB12A60CW Page 3

TAGS

WTPB12A60CW
Sensitive
Gate
Bi-Directional
Triode
Thyristor
WINSEMI SEMICONDUCTOR

Manufacturer


WINSEMI SEMICONDUCTOR

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