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WTPB12A60CW - Sensitive Gate Bi-Directional Triode Thyristor

General Description

General purpose swithhing and phase control applications.

These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.

Key Features

  • Repetitive Peak off-State Voltage: 600V.
  • R. M. S On-State Current(IT(RMS)=12A.
  • Low on-state voltage: VTM=1.55V(Max. )@ IT=17A.
  • High Commutation dV/dt. General.

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Datasheet Details

Part number WTPB12A60CW
Manufacturer WINSEMI SEMICONDUCTOR
File Size 270.49 KB
Description Sensitive Gate Bi-Directional Triode Thyristor
Datasheet download datasheet WTPB12A60CW Datasheet

Full PDF Text Transcription for WTPB12A60CW (Reference)

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WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ Low on-state voltage:...

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age: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A ■ High Commutation dV/dt. General Description General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.