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WINSEMI SEMICONDUCTOR

WTPB12A60CW Datasheet Preview

WTPB12A60CW Datasheet

Sensitive Gate Bi-Directional Triode Thyristor

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WTPB12A60CW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
Repetitive Peak off-State Voltage: 600V
R.M.S On-State Current(IT(RMS)=12A
Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
High Commutation dV/dt.
General Description
General purpose swithhing and phase control applications.
These devices are intended to be interfaced directly to
micro-controllers, logic integrated circuits and other low power
gate trigger circuits such as fan speed and temperature
modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VPRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58)
600 V
12 A
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
120/126
A
I2t Circuit Fusing Considerations (tp= 10 ms)
100 A2s
PGM Peak Gate Power — Forward, (TJ = 58°C,Pulse with1.0us)
5W
PG(AV)
dI/dt
IFGM
VRGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs
TJ=125
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
1W
50 A/μs
4A
10 V
TJ, Junction Temperature
-40~125
Tstg Storage Temperature
-40~150
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.4
- - 60
Units
/W
/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
T03-3
www.DataSheet.in




WINSEMI SEMICONDUCTOR

WTPB12A60CW Datasheet Preview

WTPB12A60CW Datasheet

Sensitive Gate Bi-Directional Triode Thyristor

No Preview Available !

WTPB12A60CW
8Electrical Characteristics (TJ = 25°C unless otherwise specified)
Symbol
Characteristics
Peak Forward or Reverse Blocking Current
IDRM//IRRM (VDRM=VRRM,)
TJ=25
Min Typ. Max Unit
- - 5 μA
TJ=125
-
-
1 mA
VTM Forward “On” Voltage (Note2) (ITM = 17A tp=380μs)
- - 1.55 V
Gate Trigger Current (Continuous dc)
IGT (VD = 12 Vdc, RL = 33 )
VGT
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 )
T2+G+ - - 30
T2+G-
- - 30 mA
T2-G-
- - 30
T2+G+ - - 1.2
T2+G-
- - 1.2 V
T2-G-
- - 1.2
VGD Gate threshold voltage( VD= VDRM,RL = 3.3 K,TJ=125,) 0.2
-
-V
dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM)
40
-
- V/μs
IH Holding Current (IT= 500 mA)
(Note 3)
- - 25 mA
Latching current
IL (VD =12 Vdc,IGT=0.1A)
Rd Dynamic resistance
T2+G+ - - 40
T2+G-
- - 70 mA
T2-G-
- - 40
- - 35 m
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
Note 3. For both polarities of A2 to A1
2/5
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Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.


Part Number WTPB12A60CW
Description Sensitive Gate Bi-Directional Triode Thyristor
Maker WINSEMI SEMICONDUCTOR
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