• Part: WTPB12A60CW
  • Manufacturer: WINSEMI SEMICONDUCTOR
  • Size: 270.49 KB
Download WTPB12A60CW Datasheet PDF
WTPB12A60CW page 2
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WTPB12A60CW page 3
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WTPB12A60CW Description

General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. dIG/dt = 200mA/μs Peak Gate Current Forward, TJ = 125°C (20 µs, 120 PPS) Peak Gate Voltage Reverse, TJ= 125°C Junction...

WTPB12A60CW Key Features

  • Repetitive Peak off-State Voltage: 600V
  • R.M.S On-State Current(IT(RMS)=12A
  • Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
  • High mutation dV/dt