• Part: WTPB12A60CW
  • Description: Sensitive Gate Bi-Directional Triode Thyristor
  • Manufacturer: WINSEMI SEMICONDUCTOR
  • Size: 270.49 KB
Download WTPB12A60CW Datasheet PDF
WINSEMI SEMICONDUCTOR
WTPB12A60CW
Features - Repetitive Peak off-State Voltage: 600V - R.M.S On-State Current(IT(RMS)=12A - Low on-state voltage: VTM=1.55V(Max.)@ IT=17A - High mutation d V/dt. General Description General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings Symbol VDRM/VPRM IT(RMS) ITSM I2t PGM PG(AV) d I/dt IFGM VRGM TJ, Tstg (TJ=25℃ unless otherwise specified) Parameter Peak Repetitive Forward Blocking Voltage(gate open) Forward Current RMS (All Conduction Angles, TJ=58℃) Peak Forward Surge Current, Circuit Fusing Considerations (full Cycle, Sine Wave, 50/60 Hz) (tp= 10 ms) (Note 1) Value 600 12 120/126 100 5 1 50 4 10 -40~125 -40~150 Units V A A A2s W W A/μs A V ℃ ℃ Peak Gate Power - Forward, (TJ = 58°C,Pulse with≤1.0us) Average Gate...