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BAT54S Datasheet Preview

BAT54S Datasheet

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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®
WON-TOP ELECTRONICS
BAT54 / A / C / S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Single and Dual Diode
L
Low Forward Voltage
A
PN Junction Guard Ring for Transient and
ESD Protection
For General Purpose Switching Applications
B
C
Plastic Material – UL Recognition Flammability
Classification 94V-0
M
ED
H SOT-23
Dim Min Max
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
K
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
J
D
0.89
1.05
MIL-STD-202, Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Marking: Device Code, See Page 3
Mounting Position: Any
G
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
Lead Free: For RoHS / Lead Free Version,
M 0.076 0.178
Add “-LF” Suffix to Part Number, See Page 4
All Dimensions in mm
TOP VIEW
BAT54
TOP VIEW
BAT54A
Maximum Ratings @TA=25°C unless otherwise specified
TOP VIEW
BAT54C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Operating and Storage Temperature Range
@ t < 1.0s
Thermal Characteristics
Symbol
VRRM
VRWM
VR
IF
IFRM
IFSM
TJ, TSTG
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
PD
R JA
Note: 1. Mounted on FR-4 PC board with minimum recommended pad layout.
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
TOP VIEW
BAT54S
Value
30
200
300
600
-55 to +150
Unit
V
mA
mA
mA
°C
Value
200
500
Unit
mW
°C/W
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WON-TOP

BAT54S Datasheet Preview

BAT54S Datasheet

SURFACE MOUNT SCHOTTKY BARRIER DIODE

No Preview Available !

BAT54 / A / C / S
®
WON-TOP ELECTRONICS
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
@ IR = 100µA
Forward Voltage Drop
@ IF = 0.1mA
@ IF = 1.0mA
@ IF = 10mA
@ IF = 30mA
@ IF = 100mA
Reverse Leakage Current
@ VR = 25V
Diode Capacitance (VR = 1.0V, f = 1.0MHz)
Reverse Recovery Time (IF = IR = 10mA, IRR = 0.1 x IR, RL = 100)
250
Symbol
V(BR)
VF
IR
CD
trr
100
Min.
30
Typ.
Max.
0.24
0.32
0.40
0.50
0.80
2.0
10
5.0
Unit
V
V
µA
pF
nS
200
150
100
50
0
0 30 60 90 120 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
20
16
f = 1.0MHz
12
8
4
0
0 5 10 15 20 25
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
10 TA = 125°C
TA = 85°C
1.0
TA = 25°C
TA = -40°C
0.1
0
0.1 0.2 0.3 0.4 0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
TA = 125°C
10
1.0 TA = 85°C
0.1
0.01
TA = 25°C
0.001
0
5 10 15 20 25
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
www.wontop.com
2
© Won-Top Electronics Co., Ltd.
Revision: April, 2012


Part Number BAT54S
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Maker WON-TOP
Total Page 4 Pages
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