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MURHB860CT Datasheet Preview

MURHB860CT Datasheet

8.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

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®
WON-TOP ELECTRONICS
MURHB820CT – MURHB860CT
8.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER
Pb
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Super-Fast Recovery Time
High Voltage Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in High Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
Mechanical Data
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Device Code, See Page 3
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
AJ
B
D
G
H
PIN 1
PIN 3
PIN 1 2
E
3
PP
Case, PIN 2
K
D2 PAK/TO-263
Dim Min Max
A 9.80 10.40
B 9.60 10.60
C 4.40 4.80
D 8.50 9.10
E — 2.80
G 1.00 1.40
H — 0.99
J 1.20 1.40
K 0.30 0.70
P 2.35 2.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IO
IFSM
Forward Voltage per diode
@IF = 4.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TC = 25°C
@TC = 100°C
Reverse Recovery Time (Note 1)
IRM
trr
Typical Junction Capacitance (Note 2)
CJ
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
R JA
R JC
Operating and Storage Temperature Range
TJ, TSTG
MURHB
820CT
200
140
0.95
35
85
MURHB
830CT
MURHB
840CT
300 400
210 280
8.0
4.0
125
1.3
10
500
50
50
60
3.0
-55 to +150
MURHB
860CT
Unit
600 V
420 V
A
A
1.7 V
µA
nS
pF
°C/W
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: March, 2014
www.wontop.com
1




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MURHB860CT Datasheet Preview

MURHB860CT Datasheet

8.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

No Preview Available !

MURHB820CT – MURHB860CT
10 100
®
WON-TOP ELECTRONICS
8
6
4
2
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
125
Single Half-Sine-Wave
JEDEC Method
100
75
50
25
MURHB830CT
10 MURHB840CT
MURHB820CT
1.0
MURHB860CT
0.1
0
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
TC = 125°C
10 TC = 100°C
1.0
TC = 25°C
0.1
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
20
DC, TJ = 150°C
16
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
200
f = 1MHz
160
12 MURHB830CT
MURHB840CT
MURHB860CT
8
120
MURHB820CT
80
4
MURHB820CT
0
0 2 4 6 8 10
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
40
MURHB830CT – MURHB860CT
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: March, 2014


Part Number MURHB860CT
Description 8.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER
Maker WON-TOP
Total Page 4 Pages
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