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S40D35C Datasheet Preview

S40D35C Datasheet

40A DUAL SCHOTTKY BARRIER RECTIFIER

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®
WON-TOP ELECTRONICS
S40D30C – S40D100C
40A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
H
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SJ
RK
PIN1 2 3
SMPS, Inverters and As Free Wheeling Diodes L
P
Mechanical Data
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 1.2 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
N
M
A
B
C
GD
TO-3P
Dim Min Max
A
1.85
2.15
B
4.70
5.30
C — 23.00
D 19.00 —
E
2.80
3.20
G
0.45
0.85
H — 16.20
J
1.70
2.70
K
3.15 Ø
3.65 Ø
L — 4.50
M
5.25
5.65
N
1.10
1.40
P — 2.50
R
11.70
12.70
S
5.00
6.00
All Dimensions in mm
PIN 1
PIN 3
PIN 2
Case
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage per diode @IF = 20A, TJ = 25°C
@IF = 20A, TJ = 125°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
CJ
R JA
R JC
TJ, TSTG
S40D S40D S40D S40D S40D S40D S40D S40D
30C 35C 40C 45C 50C 60C 80C 100C
Unit
30 35 40 45 50 60 80 100 V
21 25 28 32 35 42 56 70
40
20
V
A
300 A
0.70
0.60
1100
0.75 0.85
0.65 0.75
1.0
20
650
40
1.4
-55 to +150
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1




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S40D35C Datasheet Preview

S40D35C Datasheet

40A DUAL SCHOTTKY BARRIER RECTIFIER

No Preview Available !

S40D30C – S40D100C
50
40
30
20
10
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
300
Single Half-Sine-Wave
JEDEC Method
240
180
120
60
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
20
18
DC, TJ = 150°C
Per Diode
16
14
S40D80C
12 S40D100C
10 S40D50C
S40D60C
8
S40D30C – S40D45C
6
4
2
0
0 5 10 15 20 25
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
®
100
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
WON-TOP ELECTRONICS
10
S40D30C – S40D45C
1.0
S40D50C
S40D60C
S40D80C
S40D100C
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10 TJ = 125°C
TJ = 100°C
1.0
0.1
0.01
TJ = 25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
3000
2400
f = 1MHz
1800
1200
S40D30C – S40D45C
600 S40D50C – S40D100C
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Part Number S40D35C
Description 40A DUAL SCHOTTKY BARRIER RECTIFIER
Maker WON-TOP
Total Page 4 Pages
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