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SB1620FCT Datasheet Preview

SB1620FCT Datasheet

16A DUAL SCHOTTKY BARRIER RECTIFIER

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®
WON-TOP ELECTRONICS
SB1620FCT – SB16100FCT
16A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
G
D
B
PIN1 2
3
A
Mechanical Data
Case: ITO-220, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
Mounting Position: Any
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
P
I
H
E
L
J
K
ITO-220
Dim Min Max
A 14.60 15.40
B 9.70 10.30
C 2.55 2.85
D — 4.16
E 13.00 13.80
F 0.50 0.75
G 3.00 Ø 3.50 Ø
H 6.30 6.90
I 4.20 4.80
J 2.50 2.90
K 0.50 0.75
L 2.60 3.30
P 2.29 2.79
All Dimensions in mm
PIN 1
PIN 3
PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
SB SB SB SB SB SB SB SB Unit
1620FCT 1630FCT 1640FCT 1645FCT 1650FCT 1660FCT 1680FCT 16100FCT
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage
VR(RMS) 14 21 28 32 35 42 56 70
V
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IO
IFSM
16
8.0
A
150 A
Forward Voltage
per diode
@IF = 8.0A, TJ = 25°C
@IF = 8.0A, TJ = 125°C
VFM
0.55
0.50
0.75
0.65
0.85
0.75
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
IRM
0.5
20
mA
Typical Junction Capacitance (Note 1)
CJ
500
350 pF
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
R JA
R JC
62
4.0
°C/W
RMS Isolation Voltage, t = 1 min
VISO
1500
V
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1




WON-TOP

SB1620FCT Datasheet Preview

SB1620FCT Datasheet

16A DUAL SCHOTTKY BARRIER RECTIFIER

No Preview Available !

SB1620FCT – SB16100FCT
20
16
12
8
4
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
Single Half-Sine-Wave
JEDEC Method
120
90
60
30
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10
9
DC, TJ = 150°C
Per Diode
8
7
6
5
1680FCT – 16100FCT
4
1650FCT – 1660FCT
3
2
1620FCT – 1645FCT
1
0
0 1 2 3 4 5 6 7 8 9 10
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
®
100
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
1650FCT – 1660FCT
10
1620FCT – 1645FCT
WON-TOP ELECTRONICS
1680FCT – 16100FCT
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10 TJ = 125°C
1.0
0.1
0.01
TJ = 75°C
TJ = 25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
1500
1200
f = 1MHz
900
1620FCT – 1645FCT
600
1650FCT – 16100FCT
300
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Part Number SB1620FCT
Description 16A DUAL SCHOTTKY BARRIER RECTIFIER
Maker WON-TOP
Total Page 4 Pages
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