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SB820DC Datasheet Preview

SB820DC Datasheet

8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

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®
WON-TOP ELECTRONICS
SB820DC – SB8100DC
8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 150A Peak
Low Power Loss, High Efficiency
Fast Switching
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
Mechanical Data
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
AJ
B
D
G
H
PIN 1
PIN 3
PIN 1 2
E
3
PP
Case, PIN 2
K
D2 PAK/TO-263
Dim Min Max
A 9.80 10.40
B 9.60 10.60
C 4.40 4.80
D 8.50 9.10
E — 2.80
G 1.00 1.40
H — 0.99
J 1.20 1.40
K 0.30 0.70
P 2.35 2.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage per diode
@IF = 4.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
Symbol
SB SB SB SB SB SB SB SB
820DC 830DC 840DC 845DC 850DC 860DC 880DC 8100DC
Unit
VRRM
VRWM
VR
20 30 40 45 50 60 80 100 V
VR(RMS) 14 21 28 32 35 42 56 70
V
IO
8.0
4.0
A
IFSM
150 A
VFM
IRM
CJ
R JA
R JC
TJ, TSTG
0.55 0.75 0.85 V
0.2
20
mA
450 350 pF
60
3.0
°C/W
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1




WON-TOP

SB820DC Datasheet Preview

SB820DC Datasheet

8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

No Preview Available !

SB820DC – SB8100DC
10
8
6
4
2
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
Single Half-Sine-Wave
JEDEC Method
120
90
60
30
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
4.0
3.6
DC, TJ = 150°C
Per Diode
3.2
2.8
880DC – 8100DC
2.4
850DC – 860DC
2.0
1.6
820DC – 845DC
1.2
0.8
0.4
0
0123456
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
®
100
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
WON-TOP ELECTRONICS
10
850DC – 860DC
820DC – 845DC
1.0
880DC – 8100DC
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10
1.0
0.1
0.01
TJ = 125°C
TJ = 75°C
TJ = 25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
1500
1200
f = 1MHz
900
820DC – 845DC
600
850DC – 8100DC
300
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Part Number SB820DC
Description 8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Maker WON-TOP
Total Page 4 Pages
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